Ald Apparatus and Method
First Claim
1. A chemical source vapor pressure control system (700) comprising a deposition chamber (708), a chemical source holder (722) for holding said chemical source, a chemical source heater (720), a source heater controller (728), and a deposition accumulation sensor (710), said heater controller electrically connected to said deposition accumulation sensor to control the heating of said source;
- said system characterized by;
said temperature controlled deposition accumulation sensor (710) located out of line-of sight with said chemical source; and
a sensor temperature control unit (712) for controlling the temperature of said accumulation sensor to a temperature lower than the condensation temperature of the chemical source at the desired vapor pressure.
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Accused Products
Abstract
Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (700, 700′, 700″) and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source (722) within a source space comprising: sensing the accumulation of the chemical on a sensing surface (711); and controlling the temperature of the chemical source depending on said sensed accumulation.
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Citations
12 Claims
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1. A chemical source vapor pressure control system (700) comprising a deposition chamber (708), a chemical source holder (722) for holding said chemical source, a chemical source heater (720), a source heater controller (728), and a deposition accumulation sensor (710), said heater controller electrically connected to said deposition accumulation sensor to control the heating of said source;
- said system characterized by;
said temperature controlled deposition accumulation sensor (710) located out of line-of sight with said chemical source; and
a sensor temperature control unit (712) for controlling the temperature of said accumulation sensor to a temperature lower than the condensation temperature of the chemical source at the desired vapor pressure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- said system characterized by;
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8. A method for substantially controlling the vapor pressure of a chemical source within a source space said method comprising:
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sensing the accumulation of said chemical on a sensing surface; and
controlling the temperature of said chemical source depending on said sensed accumulation. - View Dependent Claims (9, 10, 11, 12)
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Specification