LIMITER AND SEMICONDUCTOR DEVICE USING THE SAME
First Claim
Patent Images
1. A limiter comprising:
- a transistor including a floating gate and a control gate, wherein the floating gate and the control gate of the transistor overlap each other with an insulating film interposed therebetween;
a drain of the transistor is connected to the control gate; and
the drain and the control gate are connected to an input terminal and an output terminal.
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Abstract
The limiter of the invention uses as a diode a stacked gate thin film transistor (TFT) including a floating gate. When the TFT including a floating gate is used, the threshold voltage may be corrected by controlling the amount of charge accumulated in the floating gate even in the case where there are variations in the threshold voltages Vth of the TFT.
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Citations
13 Claims
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1. A limiter comprising:
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a transistor including a floating gate and a control gate, wherein the floating gate and the control gate of the transistor overlap each other with an insulating film interposed therebetween;
a drain of the transistor is connected to the control gate; and
the drain and the control gate are connected to an input terminal and an output terminal. - View Dependent Claims (7, 8, 9)
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2. A limiter comprising:
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a transistor including a floating gate and a control gate, wherein the floating gate and the control gate of the transistor overlap each other with an insulating film interposed therebetween;
a drain of the transistor is connected to the control gate; and
a source of the transistor is connected to an input terminal and an output terminal.
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3. A limiter comprising:
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a plurality of transistors each includes a floating gate and a control gate, wherein the floating gate and the control gate of each of the transistors overlap each other with an insulating film interposed therebetween;
a drain of each of the transistors is connected to the control gate;
the plurality of transistors are connected in series so as to have the same forward current direction; and
the drain and the control gate of one of the transistors, which is connected at the end, are connected to an input terminal and an output terminal.
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4. A limiter comprising:
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a plurality of transistors each includes a floating gate and a control gate, wherein the floating gate and the control gate of each of the transistors overlap each other with an insulating film interposed therebetween;
a drain of each of the transistors is connected to the control gate;
the plurality of transistors are connected in series so as to have the same forward current direction; and
a source of one of the transistors, which is connected at the end, is connected to an input terminal and an output terminal.
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5. A limiter comprising:
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a first transistor, and a second transistor, wherein a floating gate and a control gate of the first transistor overlap each other with an insulating film interposed therebetween;
a drain of the first transistor is connected to the control gate of the first transistor;
a drain of the second transistor is connected to a gate of the second transistor;
the first transistor and the second transistor are connected in series so as to have the same forward current direction; and
the drain of the second transistor and the control gate are connected to an input terminal and an output terminal.
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6. A limiter comprising:
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a first transistor, and a second transistor, wherein a floating gate and a control gate of the first transistor overlap each other with an insulating film interposed therebetween;
a drain of the first transistor is connected to the control gate of the first transistor;
a drain of the second transistor is connected to a gate of the second transistor;
the first transistor and the second transistor are connected in series so as to have the same forward current direction; and
a source of the second transistor is connected to an input terminal and an output terminal.
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10. A semiconductor device comprising:
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an integrated circuit, and an antenna connected to the integrated circuit, wherein the integrated circuit includes a limiter;
the limiter includes a transistor;
a floating gate and a control gate of the transistor overlap each other with an insulating film interposed therebetween;
a drain of the transistor is connected to the control gate. - View Dependent Claims (12, 13)
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11. A semiconductor device comprising an integrated circuit and an antenna connected to the integrated circuit,
wherein the integrated circuit includes a limiter, a pulse generation circuit for controlling a limit voltage of the limiter, and a booster circuit for supplying a power supply voltage to the pulse generation circuit; -
the limiter includes a transistor;
a floating gate and a control gate of the transistor overlap each other with an insulating film interposed therebetween;
a drain of the transistor is connected to the control gate; and
the drain and the control gate are connected to one terminal of the resistor.
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Specification