Optoelectronic Module, and Method for the Production Thereof

• US 20070274636A1
• Filed: 10/26/2004
• Published: 11/29/2007
• Est. Priority Date: 12/30/2003
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Blumel, Simon
• Granted Patent: US 8,044,474 B2
• Time in Patent Office: Days
• US Class Current: 385/40
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

An optoelectronic module having a carrier element, at least one semiconductor component for emitting or detecting electromagnetic radiation, said semiconductor component being applied on the carrier element and being electrically conductively connected and having a radiation coupling area, and also at least one optical device assigned to the semiconductor component. A connecting layer made of a radiation-transmissive, deformable material is arranged between the radiation coupling area and the optical device, the optical device and the semiconductor component being fixed relative to one another in such a way that they are pressed against one another and that the connecting layer is thereby squeezed in such a way that it generates a force that strives to press the optical device and the radiation coupling area apart.

Claims

1. An optoelectronic module, comprising:

a carrier element having electrical connection electrodes and electrical lines;

at least one semiconductor component for emitting or detecting electromagnetic radiation, said semiconductor component being applied on the carrier element and being electrically connected to connection electrodes of the carrier element and having a radiation coupling area;

at least one optical device assigned to the semiconductor component; and

a connecting layer made of a radiation-transmissive, deformable material arranged in a gap between the radiation coupling area and the optical device,

wherein the optical device and the semiconductor component are fixed relative to one another in such a way that they are pressed against one another and that the connecting layer is thereby squeezed in such a way that it generates a force that strives to press the optical device and the radiation coupling area apart.

2. The optoelectronic module of claim 1,

wherein

the connecting layer has a thickness of at least 30 μ

m.

3. The optoelectronic module of claim 2,

wherein

the connecting layer has a thickness of greater than or equal to 150 μ

m and less than or equal to 350 μ

m.

4. The optoelectronic module of claim 1,

wherein

the connecting layer has a lacquer, preferably a circuit board lacquer, which is deformable in a cured state.

5. The optoelectronic module of claim 1

wherein

a surface of the carrier element is at least partly coated for protection against external influences with a material that is also contained in the connecting layer.

6. The optoelectronic module of claim 1,

wherein

a refractive index of the connecting layer is adapted to a refractive index of a material of the semiconductor component that adjoins the connecting layer and/or to a refractive index of a material of the optical device that adjoins the connecting layer.

7. The optoelectronic module of claim 1,

wherein

the optical device has refractive and/or reflective elements.

8. The optoelectronic module of claim 1,

wherein

the semiconductor component is a luminescence diode component.

9. The optoelectronic module of claim 1,

wherein

the semiconductor component is a surface-mountable component.

16. The optoelectronic module of claim 2, wherein the connecting layer has a thickness of at least 100 μ

m.

10. A method for producing an optoelectronic module comprising the steps of:

providing a carrier element having electrical connection electrodes and electrical lines;

providing a semiconductor component for emitting or detecting electromagnetic radiation, said semiconductor component having a radiation coupling area;

providing an optical device;

applying the semiconductor component on the carrier element and electrically connecting the semiconductor component to the connection electrodes;

mounting the optical device above the radiation coupling area of the semiconductor component; and

prior to mounting the optical device, providing a curable and—

in a cured state—

radiation-transmissive and deformable composition at least over the radiation coupling area of the semiconductor component,

wherein the applied composition is at least partly cured or let to be cured, and

wherein the optical device and the semiconductor component are fixed relative to one another in such a way that they are pressed against one another and thereby that the connecting layer is squeezed in such a way that it generates a force the composition strives to press the optical device and the radiation coupling area apart.

11. The method of claim 10,

wherein

the composition is applied in the form of a layer having a thickness of at least 30 μ

m.

12. The method of claim 11,

wherein

the composition is applied in the form of a layer having a thickness of greater than or equal to 150 μ

m and less than or equal to 350 μ

m.

13. The method of claim 10,

wherein

the composition has a lacquer, preferably a circuit board lacquer, which is deformable in a cured state.

14. The method of claim 10,

wherein

the composition is applied at least to a part of a surface of the carrier element for protection against external influences.

15. The method of claim 14,

wherein

the composition is applied to the radiation coupling area and to the surface of the carrier element in a single method step.

17. The method of claim 11, wherein the composition is applied in the form of a layer having a thickness of at least 100 μ

m.