Process for producing silicon oxide films from organoaminosilane precursors
First Claim
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1. A process for forming silicon oxide film on a substrate through chemical vapor deposition of a silane oxide precursor by reaction with an oxidizing agent which comprises:
- using a silane precursor selected from the group consisting of an organoaminosilane represented by the formulas;
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Abstract
The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:
The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.
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20 Claims
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1. A process for forming silicon oxide film on a substrate through chemical vapor deposition of a silane oxide precursor by reaction with an oxidizing agent which comprises:
using a silane precursor selected from the group consisting of an organoaminosilane represented by the formulas; - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A process for producing a silicon oxide dielectric layer upon a substrate by chemical vapor deposition in a chemical vapor deposition chamber which comprises:
introducing diisopropylaminosilane and an oxidizing agent into said chemical vapor deposition chamber under conditions for reacting said diisopropylaminosilane with said oxidizing agent and depositing a silicon oxide layer onto said substrate. - View Dependent Claims (15, 16, 17)
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18. A process for producing a silicon oxynitride dielectric layer upon a substrate in by chemical vapor deposition in a chemical vapor deposition chamber which comprises:
introducing diisopropylaminosilane, a nitrogen source and an oxidizing agent into said chemical vapor deposition chamber under conditions for reacting said diisopropylaminosilane with said oxidizing compound, and said nitrogen source to deposit a silicon oxynitride layer onto said substrate. - View Dependent Claims (19, 20)
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