CELL CULTURE CHIP AND METHOD FOR REAL-TIME MONITORING OF A CELL CULTURE USING THE SAME

• US 20070275435A1
• Filed: 01/23/2007
• Published: 11/29/2007
• Est. Priority Date: 01/23/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: MIN, Jun-hong, HAN, Jung-im, KIM, Kui-hyun, CHEONG, Kwang-ho, KIM, Byung-chul
• Application Number:
  US11/625,847
• Publication Number:
  US 20070275435A1
• Time in Patent Office: Days
• US Class Current: 435/29
• CPC Class Codes: C12M 41/12 of temperature controlling the temperature of chemical or physical processes B01J19/0013, heating or cooling apparatus for laboratory use B01L7/00
• CPC Class Codes: C12M 41/26 of pH
• CPC Class Codes: C12M 41/34 of gas
• CPC Class Codes: C12M 41/36 of biomass, e.g. colony counters or by turbidity measurements electrooptical investigation of individual particles G01N15/14, flow cytometers G01N15/1404

Abstract

Disclosed herein are a cell culture chip for monitoring a cell culture in real time and a method of monitoring the cell culture using the cell culture chip. The cell culture chip includes a cell culture chamber formed by side walls of a non-conductive material and a bottom layer of an insulating material and capable of accommodating a cell culture media. The cell culture chip also includes a semiconductor layer disposed under the bottom layer, a metal layer disposed under the semiconductor layer, and an electrode disposed in the cell culture chamber. The cell culture chip monitors both the states of cells attached to walls of the cell culture chamber and the states of cells floating in the cell culture media.

Claims

1. A cell culture chip capable for monitoring a cell culture in real time, comprising:

a cell culture chamber formed by side walls of a non-conductive material and a bottom layer of an insulating material and capable of accommodating a cell culture media;

a semiconductor layer disposed under the bottom layer;

a metal layer disposed under the semiconductor layer; and

an electrode disposed in the cell culture chamber;

wherein the cell culture chip monitors both the states of cells attached to walls of the cell culture chamber and the states of cells floating in the cell culture media.

2. The cell culture chip of claim 1, wherein the non-conductive material is selected from the group consisting of silicone, glass, quartz, and plastics.

3. The cell culture chip of claim 1, wherein the insulating material is selected from the group consisting of SiO₂, silicone, glass, quartz, and plastics.

4. The cell culture chip of claim 1, wherein the semiconductor layer is a p-type semiconductor layer.

5. The cell culture chip of claim 1, wherein the metal layer is made of a material selected from the group consisting of aluminum, platinum, gold, copper, palladium, and titanium.

6. The cell culture chip of claim 1, wherein the electrode is made of a material selected from the group consisting of platinum, gold, copper, palladium, and titanium.

7. The cell culture chip of claim 1, wherein the metal layer and the electrode are connected to a measuring means for measuring an electrical parameter.

8. The cell culture chip of claim 7, wherein the electrical parameter is selected from the group consisting of capacitance, conductance, impedance, resistance, voltage, and current.

9. The cell culture chip of claim 1, wherein a plurality of cell culture chambers are arranged in the form of a microarray and each of the cell culture chambers includes the semiconductor layer, the metal layer, and the electrode.

10. A method of monitoring a cell culture in real time, comprising:

placing a cell culture media and cells to be cultured, into a cell culture chamber of a cell culture chip, the cell culture chip comprised of;

the cell culture chamber formed by side walls of a non-conductive material and a bottom layer of an insulating material and capable of accommodating the cell culture media;

a semiconductor layer disposed under the bottom layer;

a metal layer disposed under the semiconductor layer; and

an electrode disposed in the cell culture chamber;

culturing the cells in the cell culture chamber; and

measuring an electrical parameter between the metal layer and the electrode.

11. The method of claim 10, wherein culturing the cells and measuring the electrical parameter are simultaneously performed.

12. The method of claim 10, wherein the electrical parameter is selected from the group consisting of capacitance, conductance, impedance, resistance, voltage, and current.

13. The method of claim 10, further comprising converting the measured electrical parameter into a property parameter of the media.

14. The method of claim 13, wherein the property parameter is selected from the group consisting of pH, O₂ concentration, CO₂ concentration, NO concentration, and temperature.