METHODS OF MANUFACTURING INTERFEROMETRIC MODULATORS WITH THIN FILM TRANSISTORS

• US 20070275491A1
• Filed: 08/10/2007
• Published: 11/29/2007
• Est. Priority Date: 07/02/2004
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Zee, Stephen, Chui, Clarence
• Granted Patent: US 7,601,571 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A modulator has a transparent substrate with a first surface. At least one interferometric modulator element resides on the first surface. At least one thin film circuit component electrically connected to the element resides on the surface. When more than one interferometric element resides on the first surface, there is at least one thin film circuit component corresponding to each element residing on the first surface. A method of manufacturing interferometric modulators with thin film transistors is also disclosed.

Claims

1. A method of manufacturing an interferometric modulator with thin film semiconductor circuit components, the method comprising:

depositing a material layer over a transparent substrate; and

patterning and etching the first material to form a portion of at least one interferometric modulator element and a portion of at least one thin film semiconductor circuit component.

2. The method of claim 1, wherein patterning and etching comprises forming a first terminal of at least one thin film semiconductor circuit component and an optical stack of at least one interferometric modulator element.

3. The method of claim 1, wherein the material layer comprises an oxide layer, and wherein the patterning and etching comprises forming an oxide for the at least one thin film semiconductor circuit component and a dielectric for the at least one interferometric modulator element.

4. The method of claim 3, wherein the oxide layer is optically transparent.

5. The method of claim 1, wherein the material layer is a sacrificial layer comprising an amorphous silicon layer and a doped amorphous silicon layer, and wherein patterning and etching comprises forming post holes of the interferometric modulator element and a semiconductor layer of the at least one thin film semiconductor circuit component.

6. The method of claim 1, wherein the material layer is a polymer planarization layer, and wherein patterning and etching comprises forming posts of the at least one interferometric modulator element and exposing a predetermined portion of the at least one thin film semiconductor circuit component for further processing.

7. The method of claim 6, wherein the polymer is polyimide.

8. The method of claim 1, wherein the material layer is a metal layer, and wherein patterning and etching comprises forming a mirror element of the at least one interferometric modulator element and an electrode of the at least one thin film semiconductor circuit component.

9. The method of claim 1, wherein the at least one thin film semiconductor circuit component comprises a thin film transistor;

a low-temperature, polysilicon, top gate transistor;

a low-temperature, polysilicon, bottom gate transistor;

or a thin film diode.