METHODS AND APPARATUS FOR E-BEAM TREATMENT USED TO FABRICATE INTEGRATED CIRCUIT DEVICES
First Claim
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1. A method for fabricating a dielectric film, comprising:
- chemical vapor depositing a dielectric film; and
curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising;
one or more organo-silicon compounds selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, diethylsilane, propylsilane, vinylmethylsilane, 1,1,2,2-tetramethyldisilane, hexamethyldisilane, 1,1,2,2,3,3-hexamethyltrisilane, 1,1,2,3,3-pentamethyltrisilane, dimethyldisilanoethane, dimethyldisilanopropane, tetramethyldisilanoethane, tetramethyldisilanopropane, and 1,3,5-trisilano-2,4,6-trimethylene; and
one or more carbon-carbon bond containing hydrocarbon compounds selected from the group of ethylene, propylene, acetylene, butadiene, t-butylethylene, 1,1,3,3-teramethylbutylbenzene, t-butylether, methyle-methacrylate, and t-butyfurfurylether.
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Abstract
One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.
227 Citations
10 Claims
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1. A method for fabricating a dielectric film, comprising:
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chemical vapor depositing a dielectric film; and
curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising;
one or more organo-silicon compounds selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, diethylsilane, propylsilane, vinylmethylsilane, 1,1,2,2-tetramethyldisilane, hexamethyldisilane, 1,1,2,2,3,3-hexamethyltrisilane, 1,1,2,3,3-pentamethyltrisilane, dimethyldisilanoethane, dimethyldisilanopropane, tetramethyldisilanoethane, tetramethyldisilanopropane, and 1,3,5-trisilano-2,4,6-trimethylene; and
one or more carbon-carbon bond containing hydrocarbon compounds selected from the group of ethylene, propylene, acetylene, butadiene, t-butylethylene, 1,1,3,3-teramethylbutylbenzene, t-butylether, methyle-methacrylate, and t-butyfurfurylether. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification