Thin film photovoltaic structure

• US 20070277875A1
• Filed: 08/28/2006
• Published: 12/06/2007
• Est. Priority Date: 05/31/2006
• Status: Abandoned Application

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Gadkaree, Kishor Purushottam, Dawson-Elli, David Francis, Walton, Robin Merchant
• Application Number:
  US11/511,041
• Publication Number:
  US 20070277875A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/0392 including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/03923 including AIBIIICVI compound materials, e.g. CIS, CIGS
• CPC Class Codes: H01L 31/03925 including AIIBVI compound materials, e.g. CdTe, CdS
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells

Abstract

Photovoltaic devices include an insulator structure bonded to an exfoliation layer, preferably of a substantially single-crystal donor semiconductor wafer, and at least one photovoltaic device layer, such as a conductive layer. In a preferred embodiment, a device may include a conductive layer adjacent to the insulator substrate and integral to the exfoliation layer, near the side that faces the insulator substrate, such as between the insulator substrate and the exfoliation layer. In a further preferred embodiment, a device may include a plurality of photovoltaic device layers distal to the insulator substrate and in or on the exfoliation layer, preferably having been epitaxially grown on the exfoliation layer after the exfoliation layer has been anodically bonded to the insulator substrate by means of electrolysis.

Claims

1. A photovoltaic device, comprising:

an insulator structure;

an exfoliation layer; and

a conductive layer integral to the exfoliation layer and proximate to the insulator structure; and

a bond bonding the insulator structure to the conductive layer and the exfoliation layer,

wherein the exfoliation layer comprises a substantially single-crystal exfoliation layer of a substantially single-crystal donor semiconductor wafer.

2. The photovoltaic device of claim 1, wherein the bond is an anodic bond formed by electrolysis.

3. The photovoltaic device of claim 2, wherein the anodic bond comprises an interface region.

4. The photovoltaic device of claim 3, wherein the interface region comprises a hybrid region and a depletion region.

5. The photovoltaic device of claim 1, further comprising:

a first ion migration zone in the insulator; and

a second ion migration zone across the conductive layer and the exfoliation layer.

6. The photovoltaic device of claim 1, wherein the conductive layer comprises a metal-based material or a metal-oxide based material.

7. The photovoltaic device of claim 1, wherein the exfoliation layer comprises a doped semiconductor layer and the conductive layer comprises a back contact layer or a conducting window layer.

8. The photovoltaic device of claim 7, wherein the doped semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer, or a semiconductor junction layer having n-type and p-type doped regions.

9. The photovoltaic device of claim 7, wherein:

the back contact layer comprises aluminum, titanium, nickel, tungsten, indium, molybdenum, gold, platinum, palladium, gallium, tin, antimony, silver, germanium, or a silicide; and

the conducting window layer comprises tin-doped indium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, or carbon nanotubes.

10. The photovoltaic device of claim 1, further comprising a plurality of photovoltaic device layers created in or on the exfoliation layer and distal to the insulator substrate.

11. The photovoltaic device of claim 10, wherein the plurality of photovoltaic device layers includes at least one semiconductive layer, at least one conductive layer, and at least one passivating layer.

12. The photovoltaic device of claim 10, wherein at least one of the plurality of photovoltaic device layers comprises an epitaxially grown crystalline layer.

13. The photovoltaic device of claim 1, further comprising at least one additional photovoltaic device layer integral to the exfoliation layer and proximate to the insulator substrate.

14. A photovoltaic device, comprising:

an insulator structure;

an exfoliation layer proximate to the insulator structure;

an anodic bond bonding the insulator structure and the exfoliation layer; and

a plurality of photovoltaic device layers distal to the insulator substrate and in or on the exfoliation layer;

wherein the exfoliation layer comprises a substantially single-crystal exfoliation layer of a substantially single-crystal donor semiconductor wafer.

15. The photovoltaic device of claim 14, further comprising:

a first ion migration-zone in the insulator; and

a second ion migration zone in the exfoliation layer.

16. The photovoltaic device of claim 14, wherein the anodic bond comprises an interface region.

17. The photovoltaic device of claim 16, wherein the interface region comprises a hybrid region and a depletion region.

18. The photovoltaic device of claim 14, wherein the plurality of photovoltaic device layers includes a semiconductive layer and a conductive layer.

19. The photovoltaic device of claim 18, wherein the plurality of photovoltaic device layers further includes at least one more semiconductive layer, at least one more conductive layer, and at least one passivating layer.

20. The photovoltaic device of claim 18, wherein the conductive layer comprises a metal-based material or a metal-oxide based material.

21. The photovoltaic device of claim 14, wherein the plurality of photovoltaic device layers includes a doped semiconductor layer, a back contact layer and a conducting window layer.

22. The photovoltaic device of claim 21, wherein the doped semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer, or a semiconductor junction layer having n-type and p-type doped regions.

23. The photovoltaic device of claim 21, wherein:

the back contact layer comprises aluminum, titanium, nickel, tungsten, indium, molybdenum, gold, platinum, palladium, gallium, tin, antimony, silver, germanium, or a silicide; and

the conducting window layer comprises tin-doped indium oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, or carbon nanotubes.

24. The photovoltaic device of claim 14, wherein at least one of the plurality of photovoltaic device layers comprises an epitaxially grown crystalline layer.