Micromechanical thermal sensor

• US 20070278407A1
• Filed: 06/02/2006
• Published: 12/06/2007
• Est. Priority Date: 06/02/2006
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Wood, Roland A., Higashi, Robert E., Cox, James A., Nusseibeh, Fouad A.
• Granted Patent: US 7,501,626 B2
• Time in Patent Office: Days
• US Class Current: 250/341.100
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 3/42 Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry beam switching arrangements G01J3/08
• CPC Class Codes: G01J 3/4532 Devices of compact or symmetric construction G01J3/4531 takes precedence
• CPC Class Codes: G01J 5/02 Constructional details
• CPC Class Codes: G01J 5/023 Particular leg structure or construction or shape; Nanotubes
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/0837 Microantennas, e.g. bow-tie
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: G01J 5/40 using bimaterial elements

Abstract

A radiation sensor that can operate in the THz regime comprising: a micro antenna, which may comprise a two-dimensional patterned thin-film metallizations on a thin dielectric pellicle fabricated by micro machining of a silicon wafer; a thermally isolated microstructure; a coupling mechanism for coupling the energy from the micro antenna to the microstructure, the coupling mechanism providing high thermal isolation between the micro antenna and the microstructure; a temperature signal detector on the microstructure; and signal processing electronics for receiving the temperature signal and processing it into useful data.

Claims

1. A sensor for detecting radiation comprising:

a substrate

a micro antenna formed on said substrate;

a microstructure formed on and suspended apart from said substrate;

a coupling means for coupling energy received by said micro antenna into said microstructure;

a temperature signal detector positioned on said microstructure adapted to detect temperature change and generate a temperature change signal in response thereto; and

read out electronics coupled to receive said temperature change signal.

2. The sensor of claim 1 wherein said temperature signal detector comprises a first thermocouple.

3. The sensor of claim 2 wherein said first thermocouple is positioned on said microstructure as far as possible from where said microstructure contacts said substrate.

4. The sensor of claim 1 wherein said first thermocouple is formed at a center of said microstructure and wherein said sensor further comprises a second thermocouple on said substrate and wherein said read out electronics are coupled to said first and second thermocouples.

5. The sensor of claim 1 wherein said microstructure is impedance matched to said micro antenna.

6. The sensor of claim 2 wherein said coupling means comprises ohmic contacts.

7. The sensor of claim 6 wherein said coupling means comprises first and second electrically conductive contact pads on said substrate in electrical contact with said microstructure.

8. The sensor of claim 2 wherein said coupling means comprises capacitive couples.

9. The sensor of claim 8 wherein said capacitive couples comprises first and second capacitive couples, each capacitive couple comprising:

a first capacitive plate on said microstructure suspended above said substrate;

a second capacitive plate on said substrate positioned below said first capacitive plate in order to capacitively couple to said first capacitive plate, wherein said second capacitive plate is electrically coupled to said micro antenna.

10. The sensor of claim 9 wherein said microstructure comprises a bridge that is in contact with said substrate at opposing ends thereof and is suspended above said substrate between said opposing ends, said bridge comprising:

a first, non-conductive base material formed in a shape of said microstructure;

a first portion of said first material covered with a second, electrically conductive material; and

a second portion of said first material covered with a third, electrically conductive material selected relative to said first material so as to form a thermocouple there with

wherein said first and second portions of said microstructure overlap to form said first thermocouple; and

wherein said first capacitive plate of said first capacitive couple is part of said first portion of said microstructure and said first capacitive plate of said second capacitive couple is part of said second portion of said microstructure.

11. The sensor of claim 10 wherein said microstructure contacts said substrate at first and second contact points in said first and second portions of said microstructure, respectively, and each of said first capacitive plates is separated from said respective contact point by a serpentine leg suspended above said substrate and wherein said thermocouple is separated from each of said respective first capacitive plates of said first and second capacitive couples by a serpentine leg of said microstructure.

12. The sensor of claim 11 wherein said first material is silicon nitride, said second, electrically conductive material is NiFe and said third, electrically conductive material is chrome.

13. The sensor of claim 1 wherein said micro antenna is configured to receive radiation in the THz range.

14. The sensor of claim 1 wherein said micro antenna is configured to receive radiation in the range of about 0.1 THz to about 20 THz.

15. The sensor of claim 14 wherein said micro antenna comprises:

at least one antenna element suspended above an opening in said substrate; and

a microstrip coupled to said coupling means.

16. The sensor of claim 1 wherein said microstructure comprises a beam cantilevered over said substrate formed of a material so as to deform in response to one of a voltage applied across it or a temperature change and bearing a metalized portion and wherein said temperature change detector comprises said metalized portion of said microstructure and a metal plate on said substrate beneath said metalized portion of said microstructure so as to capacitively couple to each other.

17. The sensor of claim 16 wherein said material of said microstructure a piezoelectric material such that said microstructure deforms responsive to a voltage applied across said microstructure.

18. The sensor of claim 16 wherein said microstructure is formed of two metal layers having different thermal coefficients such that said microstructure deforms responsive to a temperature change of said microstructure.

19. An integrated circuit comprising a sensor for detecting radiation, said integrated circuit comprising:

a substrate;

a micro antenna formed on said substrate;

a microstructure formed on and suspended apart from said substrate;

a coupling means for coupling energy received by said micro antenna into said microstructure; and

a temperature signal detector positioned on said microstructure adapted to detect temperature change and generate a temperature change signal in response thereto.

electrical contacts coupled to receive said temperature change signal.

20. The integrated circuit of claim 19 further comprising:

read out electronics coupled to said electrical contacts.