Electro-optical device and electronic apparatus

• US 20070278488A1
• Filed: 04/16/2007
• Published: 12/06/2007
• Est. Priority Date: 06/01/2006
• Status: Abandoned Application

• Current Assignee: Epson Imaging Devices Corporation (Seiko Group)
• Original Assignee: Epson Imaging Devices Corporation (Seiko Group)
• Inventors: Hirabayashi, Yukiya, Sano, Yutaka
• Application Number:
  US11/785,209
• Publication Number:
  US 20070278488A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00

Abstract

An electro-optical device includes pixel regions arranged at intersections of a plurality of data lines and a plurality of scanning lines on an element substrate. A sensor element, a sensor signal line for outputting a signal from the sensor element, and a common wiring line are disposed at an end of a region on the element substrate in which the pixel regions are arranged. A switching element is disposed between the sensor signal line and the common wiring line. A control wiring line for supplying a signal setting the switching element to be in a non-conducting state is disposed for the switching element.

Claims

1. An electro-optical device comprising:

an element substrate,

wherein a plurality of data lines, a plurality of scanning lines, and a plurality of pixel transistors connected to the scanning lines and the data lines are disposed on the element substrate,

wherein a sensor element, a sensor signal line for outputting a signal from the sensor element, and a common wiring line are disposed on the element substrate,

a switching element is disposed between the sensor signal line and the common wiring line, and

a control wiring line for supplying a signal setting the switching element to be in a non-conducting state is disposed for the switching element.

2. The electro-optical device according to claim 1, wherein a bidirectional diode element electrically connected in series with the switching element is disposed between the sensor signal line and the common wiring line.

3. The electro-optical device according to claim 1, wherein the switching element is a semiconductor element including a source electrode, a drain electrode, a semiconductor layer having a channel region, and a gate electrode facing the channel region with a gate insulating film disposed therebetween, the gate electrode being electrically connected to the control wiring line, and

the gate electrode is a floating-gate electrode that is connected to each of the source electrode and the drain electrode via a parasitic capacitance.

4. The electro-optical device according to claim 1, wherein the switching element is a semiconductor element including a source electrode, a drain electrode, a semiconductor layer having a channel region, and a gate electrode facing the channel region with a gate insulating film disposed therebetween, the gate electrode being electrically connected to the control wiring line, and

the gate electrode is a floating-gate electrode that is electrically connected to each of the source electrode and the drain electrode via a capacitor element.

5. The electro-optical device according to claim 4, wherein the capacitor element in the switching element is formed by arranging each of the source electrode and the drain electrode so as to face the gate electrode with an insulation film disposed therebetween.

6. The electro-optical device according to claim 3, wherein:

the sensor element includes

a semiconductor element including a source electrode, a drain electrode, a semiconductor layer having a channel region, and a gate electrode facing the channel region with the gate insulating film disposed therebetween, and

a capacitor element electrically connected to the semiconductor element; and

after the capacitor element is charged, a state quantity is detected on the basis of a characteristic of discharging performed via the semiconductor element of the sensor element.

7. The electro-optical device according to claim 6, wherein:

the source electrode, the drain electrode, the semiconductor layer, and the gate electrode of the switching element are made of the same materials as the materials of the source electrode, the drain electrode, the semiconductor layer, and the gate electrode of the sensor element, respectively; and

a pair of layers between which the source electrode, the drain electrode, the semiconductor layer, or the gate electrode of the switching element is disposed is the same as a pair of layers between which the source electrode, the drain electrode, the semiconductor layer, or the gate electrode of the sensor element is disposed, respectively.

8. The electro-optical device according to claim 6, wherein the channel region of the sensor element is formed of an amorphous silicon film.

9. The electro-optical device according to claim 1, wherein the sensor element is an optical sensor.

10. The electro-optical device according to claim 1, wherein the sensor element is a temperature sensor.

11. The electro-optical device according to claim 3, wherein:

each of the pixel transistors includes

a source electrode, a drain electrode, a semiconductor layer having a channel region, and a gate electrode facing the channel region with the gate insulating film disposed therebetween,

the source electrodes, the drain electrodes, the semiconductor layers, and the gate electrodes of the pixel transistors are made of the same materials as the materials of the source electrode, the drain electrode, the semiconductor layer, and the gate electrode of the switching element, respectively; and

a pair of layers between which the source electrodes, the drain electrodes, the semiconductor layers, and the gate electrodes of the pixel transistors are disposed is the same as a pair of layers between which the source electrode, the drain electrode, the semiconductor layer, or the gate electrode of the switching element is disposed, respectively.

12. An electronic apparatus comprising the electro-optical device according to claim 1.