Multilayer structures for magnetic shielding
First Claim
Patent Images
1. A magnetic shield, comprising:
- a first layer comprising a magnetic conductive material;
a second layer comprising a non-magnetic conductive material; and
a third layer comprising a non-conductive material, wherein the third layer is interposed between the first layer and the second layer.
2 Assignments
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Accused Products
Abstract
A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that may be used to block AC magnetic fields. Depending on the type of material that the first and second layers include, a third layer may be inserted in between the first and second layers. The third layer may include a non-conductive material that may be used to ensure that separate eddy current regions form in the first and second layers.
21 Citations
20 Claims
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1. A magnetic shield, comprising:
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a first layer comprising a magnetic conductive material; a second layer comprising a non-magnetic conductive material; and a third layer comprising a non-conductive material, wherein the third layer is interposed between the first layer and the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 15)
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10. A magnetic shield, comprising:
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a first layer comprising a first magnetic conductive material; a second layer comprising a second magnetic conductive material; and a third layer comprising a non-conductive material, wherein the third layer is interposed between the first layer and the second layer. - View Dependent Claims (11, 12, 13, 14)
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16. A shielded microelectronic device, comprising:
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a microelectronic device; a first magnetic shield positioned above the magnetic memory, wherein the first magnetic shield comprises a first layer for attenuating a direct current magnetic field and a second layer for attenuating an alternating current magnetic field; and a second magnetic shield positioned below the magnetic memory, wherein the second magnetic shield comprises a third layer for attenuating the direct current magnetic field and a fourth layer for attenuating the alternating current magnetic field. - View Dependent Claims (17, 18, 19, 20)
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Specification