DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME

• US 20070278942A1
• Filed: 08/15/2007
• Published: 12/06/2007
• Est. Priority Date: 11/07/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Nam-deog, Jung, Jae-Hoon
• Granted Patent: US 7,791,268 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/878 comprising reflective means

Abstract

A display device includes; a thin film transistor formed on a insulating substrate, a pixel electrode electrically connected to the thin film transistor, an organic layer formed on the pixel electrode, a wall surrounding the organic layer, a reflective film formed on the wall, and a common electrode formed on the organic layer.

Claims

1-21. -21. (canceled)

22. A display device comprising:

a thin film transistor formed on an insulating substrate;

a pixel electrode electrically connected to the thin film transistor;

an organic layer formed on the pixel electrode;

a wall surrounding the organic layer, at least part of the wall being made of a photosensitive organic material;

a reflective film formed on the wall; and

a common electrode formed on the organic layer.

23. The display device according to claim 22, wherein the reflective film comprises any one selected from a group consisting of Mo, Cr, Ag, and Al.

24. The display device according to claim 22, wherein the thickness of the reflective film is about 50 nm to about 500 nm.

25. The display device according to claim 22, wherein reflectivity of the reflective film is greater than about 70%.

26. The display device according to claim 22, wherein an angle between a side surface of the wall and the insulating substrate is about 40 degrees to about 50 degrees with respect to each other.

27. The display device according to claim 22, wherein the reflective film and the pixel electrode are spaced apart from each other.

28. The display device according to claim 22, wherein the reflective film and the organic layer are spaced apart from each other.

29. The display device according to claim 22, wherein the wall and the pixel electrode are spaced apart from each other.

30. The display device according to claim 22, wherein the wall and the organic layer are spaced apart from each other, and the organic layer comprises a low molecular weight material and is formed by an evaporation method.

31. The display device according to claim 22, wherein the wall and the organic layer are in contact with each other, the organic layer comprises polymer material and is formed by an ink jet method.

32. The display device according to claim 22, wherein the wall covers a part of the pixel electrode, and the reflective film is spaced from the pixel electrode.

33. The display device according to claim 22, wherein light transmittance of the common electrode is greater than 50%.

34. A method of manufacturing a display device, comprising:

forming a thin film transistor on an insulating substrate;

forming a pixel electrode electrically connected to the thin film transistor;

coating a photosensitive material on the pixel electrode;

exposing and developing the photosensitive material to form a wall surrounding the pixel electrode;

forming a reflective film on the wall;

forming an organic layer on the pixel electrode; and

forming a common electrode on the organic layer.

35. The manufacturing method according to claim 34, wherein the wall is formed with a side surface thereof and the insulating substrate making an angle of about 40 degrees to about 50 degrees with respect to each other.

36. The manufacturing method according to claim 34, wherein the wall is formed to be spaced apart from the pixel electrode.

37. The manufacturing method according to claim 34, wherein the photosensitive material is positive type.

38. The manufacturing method according to claim 34, wherein the photosensitive material is negative type.

39. The manufacturing method according to claim 34, wherein the exposing the photosensitive material is performed by using a mask having a slit pattern formed to correspond to a side surface of the wall.

40. The manufacturing method according to claim 34, wherein the forming of the organic layer comprises:

arranging a shadow mask having an opening wider than a region surrounded by the wall where the opening corresponds to the pixel electrode; and

supplying organic material vapor through the opening.

41. A method of manufacturing a display device, comprising:

forming a thin film transistor on an insulating substrate;

forming a pixel electrode electrically connected to the thin film transistor;

coating a photosensitive material on the pixel electrode;

pressing an imprint mask formed with an intaglio pattern against the photosensitive material to form a wall surrounding the pixel electrode;

forming a reflective film on the wall;

forming an organic layer on the pixel electrode; and

forming a common electrode on the organic layer.