METHOD OF WRITING DATA TO A SEMICONDUCTOR MEMORY DEVICE
First Claim
1. A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a nonvolatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method comprising:
- performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell;
performing a second data write operation for writing data into the second memory cell; and
performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.
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Abstract
A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a non-volatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method including: performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell; performing a second data write operation for writing data into the second memory cell; and performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.
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Citations
1 Claim
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1. A method of writing data to a semiconductor memory device with memory cells, each of which stores data defined by threshold voltage thereof in a nonvolatile manner, the device having first and second memory cells disposed adjacent to each other to be sequentially written in this order, the method comprising:
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performing a first data write operation for writing data defined by a threshold voltage lower than a desired threshold voltage into the first memory cell;
performing a second data write operation for writing data into the second memory cell; and
performing a third data writing operation for writing data defined by the desired threshold voltage into the first memory cell.
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Specification