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Semiconductor Laser Device and Manufacturing Method Thereof

  • US 20070280318A1
  • Filed: 12/06/2005
  • Published: 12/06/2007
  • Est. Priority Date: 12/08/2004
  • Status: Active Grant
First Claim
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1. A semiconductor laser device, comprising:

  • a substrate having a principal plane;

    a two-dimensional diffraction grating that is formed on said substrate in a direction in which said principal plane extends and has an epitaxial layer of gallium nitride and a low refractive index material having a refractive index lower than that of said epitaxial layer;

    a first conductive-type clad layer formed on said substrate;

    a second conductive-type clad layer formed on said substrate;

    an active layer that is interposed between said first conductive-type clad layer and said second conductive-type clad layer and emits light when a carrier is injected thereinto; and

    a layer containing gallium nitride that covers a region directly on said two-dimensional diffraction grating.

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