SURFACE-EMITTING LASER DEVICE AND SURFACE-EMITTING LASER ARRAY INCLUDING SAME
First Claim
1. A surface-emitting laser device, comprising:
- a substrate connected to a heat sink;
a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate;
a first cavity spacer layer formed in contact with the first reflective layer;
an active layer formed in contact with the first cavity spacer layer;
a second cavity spacer layer formed in contact with the active layer; and
a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer, wherein the first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than a thermal conductivity of a semiconductor material forming the second cavity spacer layer.
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Accused Products
Abstract
A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.
65 Citations
22 Claims
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1. A surface-emitting laser device, comprising:
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a substrate connected to a heat sink;
a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate;
a first cavity spacer layer formed in contact with the first reflective layer;
an active layer formed in contact with the first cavity spacer layer;
a second cavity spacer layer formed in contact with the active layer; and
a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer, wherein the first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than a thermal conductivity of a semiconductor material forming the second cavity spacer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification