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Semiconductor on insulator structure made using radiation annealing

  • US 20070281172A1
  • Filed: 03/21/2007
  • Published: 12/06/2007
  • Est. Priority Date: 05/31/2006
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor-on-insulator structure, comprising:

  • subjecting an at least one unfinished surface of a crystalline layer to a radiation annealing process.

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