Method for sealing and backside releasing of microelectromechanical systems
First Claim
1. A method for encapsulating and integrating nano- and micro-electromechanical systems (MEMS) comprising:
- fabricating a MEMS device in a substrate;
covering the MEMS device with an etch resistant mask layer;
etching the substrate beneath the MEMS device from the backside of the substrate; and
releasing the MEMS device from the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed are methods for fabricating encapsulated microelectromechanical systems (MEMS) devices. A MEMS device fabricated on a CMOS wafer is encapsulated using an etch resistant thin film layer prior to the release of the MEMS device. Once CMOS processing is completed, the wafer is etched to release the MEMS device. If the MEMS is fabricated on a silicon-on-insulator (SOI) wafer, the buried oxide of the SOI wafer acts as an etch stop for the etching. A sacrificial layer(s) is accessed and removed from the back side of the wafer, while the front side of the wafer is protected by a masking layer. The MEMS device is released without having any detrimental effects on CMOS components. If desired, the wafer can be mounted on another substrate to provide hermetic or semi-hermetic sealing of the device.
-
Citations
26 Claims
-
1. A method for encapsulating and integrating nano- and micro-electromechanical systems (MEMS) comprising:
-
fabricating a MEMS device in a substrate; covering the MEMS device with an etch resistant mask layer; etching the substrate beneath the MEMS device from the backside of the substrate; and releasing the MEMS device from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 19)
-
-
8. A method for encapsulating and integrating nano- and micro-electromechanical systems (MEMS) comprising:
-
providing a semiconductor-on-insulator substrate comprising a handle layer, a device layer, and an insulating layer disposed between the handle and device layers; fabricating a microelectromechanical systems (MEMS) device in the device layer; covering the MEMS devices with an etch resistant mask layer; etching the handle layer beneath the MEMS device using the insulating layer as an etch stop; and releasing the MEMS device from the device layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
20. A method for encapsulating and integrating nano and microelectromechanical systems (MEMS) comprising:
-
providing a semiconductor-on-insulator substrate comprising a handle layer, a device layer, and an insulating layer disposed between the handle and device layers; fabricating a transistor-based circuit in the device layer; fabricating a microelectromechanical systems (MEMS) device in the handle layer; and releasing the MEMS device from the handle layer. - View Dependent Claims (21, 22, 23, 24, 25, 26)
-
Specification