Producing SOI structure using high-purity ion shower
First Claim
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1. A process for forming a SOI structure comprising the following steps:
- (I) providing a donor substrate comprising semiconductor material having a first donor external surface; and
(II) implanting a plurality of ions belonging to a first species through the first donor external surface into an ion implantation zone at a depth below the first donor external surface by using a first ion shower purified by electromagnetic separation such that the structure of at least a 50 nm thick part of the material sandwiched between the ion implantation zone and the first donor external surface (“
exfoliation film”
) is essentially not damaged.
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Abstract
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
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Citations
47 Claims
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1. A process for forming a SOI structure comprising the following steps:
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(I) providing a donor substrate comprising semiconductor material having a first donor external surface; and (II) implanting a plurality of ions belonging to a first species through the first donor external surface into an ion implantation zone at a depth below the first donor external surface by using a first ion shower purified by electromagnetic separation such that the structure of at least a 50 nm thick part of the material sandwiched between the ion implantation zone and the first donor external surface (“
exfoliation film”
) is essentially not damaged. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A process for forming a SOI structure comprising the following steps:
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(A1) providing a donor substrate and a recipient substrate, wherein; (1) the donor substrate comprises a semiconductor material and a first donor external surface for bonding with the recipient substrate (first bonding surface) and a second donor external surface; (2) the recipient substrate comprises an oxide glass or oxide glass-ceramic and two external surfaces;
(i) a first recipient external surface for bonding to the first substrate (the second bonding surface); and
(ii) a second recipient external surface;(A2) implanting a plurality of ions belonging to a first species through the first donor external surface into an ion implantation zone of the donor substrate at a depth below the first donor external surface by using a first ion shower purified by electromagnetic separation such that the internal structure of at least a 50 nm thick part of the film of material sandwiched between the ion implantation zone and the first donor external surface (“
exfoliation film”
) is essentially not damaged;(B) after steps (A1) and (A2), bringing the first and second bonding surfaces into contact; (C) for a period of time sufficient for the donor and recipient substrates to bond to one another at the first and second bonding surfaces, simultaneously; (1) applying forces to the donor substrate and/or the recipient substrate such that the first and second bonding surfaces are pressed into contact; (2) subjecting the donor and recipient substrates to an electric field having a general direction of from the second recipient external surface to the second donor external surface; and (3) heating the donor and recipient substrates, said heating being characterized in that the second donor and recipient external surfaces have average temperatures T1 and T2, respectively, said temperatures being selected such that upon cooling to a common temperature, the donor and recipient substrates undergo differential contraction to thereby weaken the donor substrate at the ion implantation zone; and (D) cooling the bonded donor and recipient substrates and splitting the donor substrate at the ion implantation zone; wherein the oxide glass or oxide glass-ceramic comprises positive ions which during step (C) move within the recipient substrate in a direction away from the second bonding surface and towards the second recipient external surface. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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Specification