Ambipolar organic thin-film field-effect transistor and making method

• US 20070281412A1
• Filed: 08/01/2007
• Published: 12/06/2007
• Est. Priority Date: 03/25/2005
• Status: Active Grant

• Current Assignee: Eriko Mizuno, Ikuo Fukui, Masateru Taniguchi, Tomoji Kawai
• Original Assignee: Eriko Mizuno, Ikuo Fukui, Masateru Taniguchi, Tomoji Kawai
• Inventors: Fukui, Ikuo, Kawai, Tomoji, Taniguchi, Masateru, Mizuno, Eriko
• Granted Patent: US 7,507,613 B2
• Time in Patent Office: Days
• US Class Current: 438/197
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 85/311 Phthalocyanine

Abstract

In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Claims

1. A method for preparing an ambipolar organic thin-film field-effect transistor, comprising the steps of:

applying a solution of an organic solvent-soluble organic compound in an organic solvent onto a gate electrode in the form of a metal layer,

drying the applied solution to form an insulator layer, and

laying a semiconductor layer on the insulator layer.