SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A MOS semiconductor device manufacturing method comprising:
- forming an device region of a first conductivity type for forming first MOS semiconductor element devices and a device region of a second conductivity type for forming second MOS semiconductor element devices in a semiconductor substrate;
forming a gate insulator;
forming a laminated film comprising a molybdenum film and a nitrogen containing film which is to be used to dope nitrogen into the molybdenum film;
doping nitrogen from the nitrogen containing film into the molybdenum film;
processing the laminated film into gate electrodes of the first and second MOS semiconductor element devices;
removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element device and covering the gate electrode of the first MOS semiconductor element devices with a nitrogen diffusion preventing film; and
reducing the nitrogen concentration in the molybdenum film of the gate electrodes of the second MOS semiconductor element device.
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Abstract
A manufacturing method for a CMOS semiconductor device in which gate electrodes are adjusted to have different work function values comprises forming an device region of a first and second conductivity type for forming first and second MOS semiconductor element devices, respectively, in a semiconductor substrate, forming a gate insulator, forming a laminated film comprising a molybdenum film and nitrogen containing film for doping nitrogen into molybdenum, doping nitrogen from the nitrogen containing film into molybdenum, processing the laminated film into gate electrodes of the first and second MOS semiconductor element devices, removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element device and covering the gate electrode of the first MOS semiconductor element devices with a nitrogen diffusion preventing film, and reducing the nitrogen concentration in molybdenum of the gate electrodes of the second MOS semiconductor element device. Additional advantages and modifications will readily occur to those skilled in the art. Therefore, the invention in its broader aspects is not limited to the specific details and representative embodiments shown and described herein. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
10 Citations
15 Claims
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1. A MOS semiconductor device manufacturing method comprising:
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forming an device region of a first conductivity type for forming first MOS semiconductor element devices and a device region of a second conductivity type for forming second MOS semiconductor element devices in a semiconductor substrate;
forming a gate insulator;
forming a laminated film comprising a molybdenum film and a nitrogen containing film which is to be used to dope nitrogen into the molybdenum film;
doping nitrogen from the nitrogen containing film into the molybdenum film;
processing the laminated film into gate electrodes of the first and second MOS semiconductor element devices;
removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element device and covering the gate electrode of the first MOS semiconductor element devices with a nitrogen diffusion preventing film; and
reducing the nitrogen concentration in the molybdenum film of the gate electrodes of the second MOS semiconductor element device. - View Dependent Claims (2, 3, 4, 5)
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6. A MOS semiconductor device manufacturing method comprising:
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forming an device region of a first conductivity type for forming first MOS semiconductor element devices and an device region of a second conductivity type for forming second MOS semiconductor element devices in a semiconductor substrate;
sequentially forming a gate insulator and a molybdenum film;
processing the molybdenum film into gate electrodes of the first and second MOS semiconductor element devices;
forming a nitrogen containing film which is to be used to dope nitrogen into the molybdenum film of the gate electrodes;
doping nitrogen into the molybdenum film from the nitrogen containing film;
removing the nitrogen containing film from the gate electrodes of the second MOS semiconductor element devices and covering the gate electrodes of the first MOS semiconductor element devices with a nitrogen diffusion preventing film; and
reducing the nitrogen concentration in the molybdenum film of the gate electrodes of the second MOS semiconductor element devices. - View Dependent Claims (7, 8, 9, 10)
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11. A MOS semiconductor device manufacturing method comprising:
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forming an device region of a first conductivity type for forming first MOS semiconductor element devices and a device region of a second conductivity type for forming second MOS semiconductor element devices on a semiconductor substrate;
sequentially forming a gate insulator and a molybdenum film;
processing the molybdenum film into gate electrodes of the first and second MOS semiconductor element devices;
forming a nitrogen containing film which is to be used to dope nitrogen into the molybdenum film of the gate electrodes;
removing the nitrogen containing film on the gate electrodes of the second MOS semiconductor element devices; and
doping nitrogen from the nitrogen containing film into the molybdenum film of the gate electrodes of the first MOS semiconductor element devices. - View Dependent Claims (12, 13, 14, 15)
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Specification
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- Resources
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Current AssigneeSemiconductor Technology Academic Research Center
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Original AssigneeSemiconductor Technology Academic Research Center
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InventorsShibahara, Kentaro
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Application NumberUS11/771,916Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current438/233CPC Class CodesH01L 21/823842 gate conductors with differ...
