Techniques for Layer Transfer Processing
First Claim
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1. A method of forming a layer transfer structure, the method comprising the steps of:
- providing a carrier substrate; and
processing the carrier substrate to create a porous legion with a tuned porosity in combination with an implanted species defining a separation plane therein.
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Abstract
Techniques for the fabrication of semiconductor devices are provided. In one aspect, a layer transfer structure is provided. The layer transfer structure comprises a carrier substrate having a porous region with a tuned porosity in combination with an implanted species defining a separation plane therein In another aspect, a method of forming a layer transfer structure is provided. In yet another aspect, a method of forming a thee dimensional integrated structure is provided.
239 Citations
37 Claims
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1. A method of forming a layer transfer structure, the method comprising the steps of:
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providing a carrier substrate; and
processing the carrier substrate to create a porous legion with a tuned porosity in combination with an implanted species defining a separation plane therein. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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7. The method of 1, wherein the processing step further comprises the step of finally tuning the porosity of the porous region by anodization of the carrier substrate.
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20. A method of forming a three dimensional integrated structure, the method comprising the steps of:
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bonding a decal structure comprising a transfer layer on a carrier substrate, the substrate having a porous region with a tuned porosity in combination with an implanted species defining a separation plane therein, to a receiver structure; and
separating the transfer layer from the substrate at the separation plane in the porous region - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification