NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE
First Claim
1. A method of filling a gap on a substrate with silicon oxide, the method comprising:
- introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber;
reacting the precursors to form a first silicon oxide layer in the gap on the substrate;
etching the first silicon oxide layer to reduce the carbon content in the layer;
forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the layer; and
annealing the silicon oxide layers after the gap is filled.
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Abstract
Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.
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Citations
36 Claims
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1. A method of filling a gap on a substrate with silicon oxide, the method comprising:
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introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber; reacting the precursors to form a first silicon oxide layer in the gap on the substrate; etching the first silicon oxide layer to reduce the carbon content in the layer; forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the layer; and annealing the silicon oxide layers after the gap is filled. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of forming a multilayer silicon oxide film on a substrate, the method comprising:
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forming a plurality of silicon oxide layers on the substrate, wherein each silicon oxide layer has a thickness of about 100 Å
to about 200 Å
, and wherein each layer is formed by;(i) introducing an organo-silicon precursor and an atomic oxygen precursor to a reaction chamber, (ii) reacting the precursors to form the layer on the substrate, and (iii) etching the layer to reduce impurities in the layer; and annealing the plurality of layers. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A system for performing a multi-cycle, silicon oxide bottom-up gapfill of gaps on a wafer substrate, the system comprising:
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a deposition chamber in which the gap containing substrate is held; a remote plasma generating system coupled to the deposition chamber, wherein the plasma generating system is used to generate an atomic oxygen precursor; an organo-silicon precursor source used to supply an organo-silicon precursor to the deposition chamber; a precursor handling system used to direct flows of the atomic oxygen precursor and the silicon precursor into the deposition chamber, wherein the precursor handling system keeps the atomic oxygen and silicon precursors from mixing before they enter the deposition chamber; and an etching system to etch individual silicon oxide layers deposited during each cycle of the multi-cycle gapfill. - View Dependent Claims (34, 35, 36)
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Specification