Semiconductor device having vertical channel transistor
First Claim
1. A semiconductor device, comprising:
- a substrate; and
a plurality of active pillars arranged in a pattern of alternating even and odd rows and alternating even and odd columns, each active pillar extending from the substrate and including a channel portion, wherein;
the odd columns include active pillars spaced at a first pitch, the first pitch being determined in the column direction,the even columns include active pillars spaced at the first pitch,active pillars in the odd columns are spaced apart from active pillars in the even columns by a third pitch, the third pitch being determined in the row direction, andactive pillars in the even columns are offset by a second pitch from active pillars in the odd columns, the second pitch being determined in the column direction.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a substrate, and a plurality of active pillars arranged in a pattern of alternating even and odd rows and alternating even and odd columns, each active pillar extending from the substrate and including a channel portion, wherein the odd columns include active pillars spaced at a first pitch, the first pitch being determined in the column direction, the even columns include active pillars spaced at the first pitch, the even rows include active pillars spaced at a third pitch, the third pitch being determined in the row direction the odd rows include active pillars spaced at the third pitch, and active pillars in the even columns are offset by a second pitch from active pillars in the odd columns, the second pitch being determined in the column direction.
-
Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a substrate; and a plurality of active pillars arranged in a pattern of alternating even and odd rows and alternating even and odd columns, each active pillar extending from the substrate and including a channel portion, wherein; the odd columns include active pillars spaced at a first pitch, the first pitch being determined in the column direction, the even columns include active pillars spaced at the first pitch, active pillars in the odd columns are spaced apart from active pillars in the even columns by a third pitch, the third pitch being determined in the row direction, and active pillars in the even columns are offset by a second pitch from active pillars in the odd columns, the second pitch being determined in the column direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor device, comprising:
-
a substrate; a plurality of active pillars arranged in a pattern of alternating even and odd rows and alternating even and odd columns, each active pillar extending from the substrate and including a channel portion, wherein; the odd columns include active pillars spaced at a first pitch, the first pitch being determined in the column direction, the even columns include active pillars spaced at the first pitch, the even rows include active pillars spaced at a third pitch, the third pitch being determined in the row direction, the odd rows include active pillars spaced at the third pitch, and active pillars in the even columns have centers that are substantially aligned with centers of active pillars in the odd columns; and storage node electrodes disposed on and electrically connected to respective active pillars, wherein; storage node electrodes in the odd columns are spaced at the first pitch, storage node electrodes in the even columns are spaced at the first pitch, and storage node electrodes in the even columns are offset by a second pitch from storage node electrodes in the odd columns. - View Dependent Claims (17, 18, 19, 20)
-
Specification