Pressure transducer with differential amplifier

• US 20070289389A1
• Filed: 06/16/2006
• Published: 12/20/2007
• Est. Priority Date: 06/16/2006
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Stewart, Carl E., Hancock, Peter G.
• Granted Patent: US 7,493,823 B2
• Time in Patent Office: Days
• US Class Current: 73/754
• CPC Class Codes: G01L 19/148 Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
• CPC Class Codes: G01L 9/0052 of piezoresistive elements circuits therefor G01L9/06
• CPC Class Codes: G01L 9/06 of piezo-resistive devices

Abstract

A semiconductor-based pressure sensor adapted for enhanced operation with controls electronics includes a pressure transducer having an output formed on a silicon die and an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer. The pressure transducer'"'"'s output is provided to the amplifier'"'"'s input via electrical connection. Output from the amplifier is connectable to a controller such as an ASIC.

Claims

1. A semiconductor-based pressure sensor adapted for enhanced operation with control electronics, comprising:

a pressure transducer having an output formed on a silicon die; and

an amplifier having an input and an output and fabricated on the silicon die next to the pressure transducer;

wherein the pressure transducer'"'"'s output is provided to the amplifier'"'"'s input via electrical connection.

2. The semiconductor-based pressure sensor of claim 1 wherein the amplifier further comprises a differential amplifier.

3. The semiconductor-based pressure sensor of claim 1 wherein the output from the amplifier is connectable to a controller.

4. The semiconductor-based pressure sensor of claim 3 wherein the amplifier further comprises a differential amplifier.

5. The semiconductor-based pressure sensor of claim 2 wherein the output from the amplifier is connectable to a controller.

6. The semiconductor-based pressure sensor of claim 1 wherein output from the amplifier is routed to at least one output pad associated with the die wherefrom external measurement and control electronics are connectable.

7. The semiconductor-based pressure sensor of claim 6 wherein external measurement and control electronics are connected to at least one output pad.

8. The semiconductor-based pressure sensor of claim 6 wherein an ASIC is connected to the at least one output pad to calibrate the sensor'"'"'s output over temperature and pressure.

9. The semiconductor-based pressure sensor of claim 2 wherein output from the amplifier is routed to at least one output pad associated with the die wherefrom external measurement and control electronics are connectable.

10. The semiconductor-based pressure sensor of claim 9 wherein external measurement and control electronics are connected to at least one output pad.

11. The semiconductor-based pressure sensor of claim 9 wherein an ASIC is connected to the at least one output pad to calibrate the sensor'"'"'s output over temperature and pressure.

12. A method using a semiconductor-based pressure sensor device to measure pressure comprising:

a semiconductor-based pressure sensor device including a pressure diaphragm adapted to generate electrical signals in response to pressure and signal amplifier electrically connected to the pressure diaphragm and fabricated with the pressure diaphragm on the same semiconductor wafer; and

exposing the pressure diaphragm to a fluidic media, wherein the pressure experienced by the diaphragm is used as a reference pressure to generate an electrical signal representing measurement of the media pressure; and

amplifying the electrical signal generated by the diaphragm with the amplifier.

13. The method of claim 12 wherein the amplifier comprises a differential amplifier.

14. The method of claim 12 wherein the output from the amplifier is connectable to a controller.

15. The method of claim 12 wherein output from the amplifier is routed to at least one output pad associated with the wafer wherefrom external measurement and control electronics are connectable.

16. The method of claim 15 wherein external measurement and control electronics are connectable to at least one output pad.

17. The method of claim 15 wherein an ASIC is connectable to the at least one output pad to calibrate the sensor'"'"'s output over temperature and pressure.

18. A method of making a pressure sensor and amplifier device, comprising:

fabricating a silicon substrate with a pressure sensor having a structure for converting physical pressure into an electrical signal, input and output electrical connections for the sensor, an amplifier located next to the pressure sensor including an input electrical connection connected to the output electrical connection of the pressure sensor, and an output electrical connection from the amplifier;

connecting the output electrical connection of the pressure sensor to the input electrical connection of the amplifier; and

connecting the output connection of the amplifier to a pad which can accept an electrical connection to a separate controller.

19. The method of claim 18 wherein external measurement and control electronics are connectable to at least one output pad.

20. The method of claim 18 wherein an ASIC is connectable to the at least one output pad to calibrate the sensor'"'"'s output over temperature and pressure.