Method of manufacturing a vertically-structured GaN-based light emitting diode

• US 20070290225A1
• Filed: 08/23/2007
• Published: 12/20/2007
• Est. Priority Date: 05/10/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Jae Hoon, Choi, Hee Seok, Oh, Jeong Tak, Lee, Su Yeol
• Granted Patent: US 8,686,450 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Claims

1-13. -13. (canceled)

14. A vertically-structured GaN-based light emitting diode comprising:

a structure supporting layer;

a p-type electrode that is formed on the upper or lower surface of the structure supporting layer;

a p-type GaN layer that is formed on the structure supporting layer on which the p-type electrode is formed;

an active layer that is formed on the p-type GaN layer;

an n-type GaN layer that is formed on the active layer and is doped with type impurities;

an undoped GaN layer that is formed on the n-type GaN layer and on which a plurality of concave patterns are periodically formed; and

an n-type electrode that is formed on the undoped GaN layer.

15. The vertically-structured GaN-based light emitting diode according to claim 14,

wherein, when the p-type electrode is formed on the lower surface of the structure supporting layer, the structure supporting layer is formed of any one selected from a group composed of a conductive substrate and a plated layer, and when the p-type electrode is formed on the upper surface of the structure supporting layer, the structure supporting layer is formed of any one selected from a group composed of a silicon substrate and a plated layer.

16. The vertically-structured GaN-based light emitting diode according to claim 14,

wherein the concave patterns with a hemispheric shape are formed so that the depth thereof ranges from 0.1 to 5 μ

m, the diameter thereof ranges from 0.5 to 5 μ

m, and the pattern period thereof ranges from 0.5 to 5 μ

m.

17. The vertically-structured GaN-based light emitting diode according to claim 14,

wherein the thickness of the undoped GaN layer ranges from 0.1 to 1 μ

m.

18. The vertically-structured GaN-based light emitting diode according to claim 14 further including

a transparent conducting oxide (TCO) layer that is formed on the undoped GaN layer.