Nitride semiconductor free-standing substrate
First Claim
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1. A nitride semiconductor free-standing substrate, comprising:
- a free-standing nitride-based compound semiconductor crystal that comprises a variation in lattice constant of ±
12 ppm or less.
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Abstract
A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.
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5 Claims
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1. A nitride semiconductor free-standing substrate, comprising:
a free-standing nitride-based compound semiconductor crystal that comprises a variation in lattice constant of ±
12 ppm or less.- View Dependent Claims (2, 3, 4, 5)
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