MULTIPLE DIELECTRIC FINFET STRUCTURE AND METHOD
First Claim
Patent Images
1. A semiconductor structure having at least one fin-type field effect transistor (FinFET), said semiconductor structure comprising:
- a substrate;
at least one first fin extending from said substrate and having first opposing sides;
at least one second fin extending from said substrate and having second opposing sides;
a first gate dielectric covering said first opposing sides of said first fin; and
a second gate dielectric covering said second opposing sides of said second fin, wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness and wherein said first thickness is different from said second thickness.
2 Assignments
0 Petitions
Accused Products
Abstract
Disclosed is a method and structure for a fin-type field effect transistor (FinFET) structure that has different thickness gate dielectrics covering the fins extending from the substrate. These fins have a central channel region and source and drain regions on opposite sides of the channel region. The thicker gate dielectrics can comprise multiple layers of dielectric and the thinner gate dielectrics can comprise less layers of dielectric. A cap comprising a different material than the gate dielectrics can be positioned over the fins.
-
Citations
10 Claims
-
1. A semiconductor structure having at least one fin-type field effect transistor (FinFET), said semiconductor structure comprising:
-
a substrate;
at least one first fin extending from said substrate and having first opposing sides;
at least one second fin extending from said substrate and having second opposing sides;
a first gate dielectric covering said first opposing sides of said first fin; and
a second gate dielectric covering said second opposing sides of said second fin, wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness and wherein said first thickness is different from said second thickness. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor structure having multiple fin-type field effect transistors (FinFETs), said semiconductor structure comprising:
-
a substrate; and
complementary transistors on said substrate, wherein said complementary transistors comprise;
at least one first fin for a first type transistor extending from said substrate;
at least one second fin for a second type transistor extending from said substrate;
a first gate dielectric covering first opposing sides of said first fin; and
a second gate dielectric covering second opposing sides of said second fin, wherein said first gate dielectric has a first thickness and said second gate dielectric has a second thickness and wherein said first thickness is different from said second thickness. - View Dependent Claims (7, 8, 9, 10)
-
Specification