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METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING AN IMPURITY-DOPED SILICON FILM

  • US 20070290259A1
  • Filed: 06/19/2007
  • Published: 12/20/2007
  • Est. Priority Date: 06/20/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device including a recessed-channel MOSFET, comprising:

  • forming a recess in a surface region of a semiconductor substrate;

    forming a gate insulation film on a surface of said semiconductor substrate;

    forming a silicon electrode film on said gate insulation film, said silicon electrode film including therein an oxygen-mixed layer substantially parallel to a surface of said recess;

    injecting impurities in said silicon electrode film; and

    heat-treating said silicon electrode film to diffuse said impurities, in the order as recited above.

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