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Trench Type Mosfet And Method Of Fabricating The Same

  • US 20070290260A1
  • Filed: 06/07/2006
  • Published: 12/20/2007
  • Est. Priority Date: 06/08/2005
  • Status: Abandoned Application
First Claim
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1. A Trench MOSFET, comprising:

  • a semiconductor substrate including a highly-doped drain region of a first conductivity type, a lightly-doped drain region of the first conductivity type, a channel body region of a second conductivity type, and a source region of the first conductivity type;

    a trench region being formed on the semiconductor substrate;

    an insulator layer formed on a bottom surface and a sidewall of the trench; and

    a gate electrode provided within the trench region, the highly-doped drain region, the lightly-doped drain region, the channel body region, and the source region being adjacently formed in this order, and the insulator layer including, on the sidewall of the trench between the lightly-doped drain region and the gate electrode, an electric-field reducer that is thicker than a thickness of the insulator layer between the gate electrode and the channel body region.

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