Semiconductor device and method of manufacturing semiconductor device

• US 20070290329A1
• Filed: 06/15/2007
• Published: 12/20/2007
• Est. Priority Date: 06/16/2006
• Status: Active Grant

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Sunohara, Masahiro, Murayama, Kei, Koizumi, Naoyuki, Higashi, Mitsutoshi, Taguchi, Yuichi
• Granted Patent: US 8,148,738 B2
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/4823 connecting the wire to a pin of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/147 Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/4926 the materials containing semiconductor material
• CPC Class Codes: H01L 23/62 Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/16235 : Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.

Claims

1. A semiconductor device comprising:

a substrate; and

an electronic component mounted on the substrate, wherein the substrate is a semiconductor substrate; and

a region of a semiconductor element formed in an impurity diffusion region of the semiconductor substrate is electrically connected to the electronic component.

2. The semiconductor device as claimed in claim 1, wherein

the semiconductor element is formed by at least two regions having different conductivity types.

3. The semiconductor device as claimed in claim 1, wherein

the semiconductor element is a zener diode capable of avoiding that a voltage higher or equal to a predetermined voltage is applied to the electronic component.

4. The semiconductor device as claimed in claim 1, further comprising:

a plurality of penetration electrodes, which are electrically connected to the electronic component, formed in the semiconductor substrate;

the plurality of penetration electrodes includes;

a first penetration electrode which is connected to a first electrode of the electronic component, and

a second penetration electrode which is connected to a second electrode of the electronic component.

5. The semiconductor device as claimed in claim 4, wherein

a first region of the semiconductor element is connected to the first electrode, and

a second region of the semiconductor element is connected to the second electrode.

6. The semiconductor device as claimed in claim 1, wherein

the semiconductor substrate is a silicon substrate.

7. The semiconductor device as claimed in claim 1, wherein

the electronic component is sealed on the substrate by a sealing structural member provided with an optical transmitting plane having an optical transmitting characteristic.

11. The semiconductor device as claimed in claim 1, wherein

the electronic component is an optical functional element.

8. A method of manufacturing a semiconductor device in which an electronic component is mounted on a substrate, comprising:

a step for forming the substrate by a semiconductor substrate;

a step for forming a region for constructing a semiconductor element in an impurity diffusion region of the semiconductor substrate;

a step for forming a wiring layer on the semiconductor substrate, the wiring layer being electrically connected to the semiconductor element; and

a step for connecting the electronic component to the wiring layer.

9. The manufacturing method of a semiconductor device as claimed in claim 8, further comprising:

a step for forming a plurality of penetration electrodes in the semiconductor substrate, the penetration electrodes being electrically connected to the electronic component.

10. The manufacturing method of a semiconductor device as claimed in claim 8, further comprising:

a step for sealing the electronic component on the substrate by an optical transmitting member having an optical transmitting characteristic.

12. The manufacturing method of a semiconductor device as claimed in claim 8, wherein

the electronic component is an optical functional element.

13. A substrate, comprising:

a semiconductor element formed by a first region and a second region which have different conductivity types.

14. The substrate as claimed in claim 13, further comprising:

a first penetration electrode which is connected to a first electrode of the semiconductor element, and

a second penetration electrode which is connected to a second electrode of the semiconductor element.

15. The substrate as claimed in claim 13, wherein

a first region of the semiconductor element is connected to the first electrode, and

a second region of the semiconductor element is connected to the second electrode.