Method for manufacturing semiconductor device

• US 20070292986A1
• Filed: 06/04/2007
• Published: 12/20/2007
• Est. Priority Date: 06/14/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fujii, Teruyuki
• Granted Patent: US 9,064,827 B2
• Time in Patent Office: Days
• US Class Current: 438/99
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/173 comprising banks or shadow masks
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 71/231 by etching of existing layers
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

An object is to provide a semiconductor device with excellent reproducibility which is manufactured at low cost. A method for manufacturing a semiconductor device includes steps of forming a first electrode over a substrate; forming an insulating layer over the substrate and the first electrode; pressing a mold against the insulating layer to form an opening in the insulating layer; separating the mold from the insulating layer in which opening is formed; hardening the insulating layer in which the opening is formed to form a partition wall; forming a light-emitting layer over the first electrode and the partition wall; and forming a second electrode over the light-emitting layer. As a method for forming the partition wall, nano-imprinting is used. An insulating layer contains polysilane. The partition wall formed of a silicon oxide film is formed by UV light irradiation and heating.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over a substrate;

forming an insulating layer containing polysilane over the substrate and the first electrode;

pressing a mold against the insulating layer to form an opening in the insulating layer, the opening reaching the first electrode;

separating the mold from the insulating layer in which the opening is formed;

hardening the insulating layer in which the opening is formed;

forming a light-emitting layer over the first electrode and the insulating layer; and

forming a second electrode over the light-emitting layer.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the hardening is performed by UV light irradiation and heating.

4. A method for manufacturing a semiconductor device according to claim 1,

wherein the mold comprises a metal material or an insulating material, and

wherein a depression is formed on a surface of the mold.

5. A method for manufacturing a semiconductor device according to claim 1, wherein a surface of the insulating layer in which the opening is formed is hardened before the hardening.

6. A method for manufacturing a semiconductor device according to claim 1, wherein the light-emitting layer comprises an organic light-emitting material.

7. A method for manufacturing a semiconductor device according to claim 1, wherein the light-emitting layer comprises an inorganic light-emitting material.

2. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first electrode over a substrate;

forming an insulating layer containing polysilane over the substrate and the first electrode;

pressing a mold against the insulating layer to form an opening in the insulating layer, the opening reaching the first electrode;

separating the mold from the insulating layer in which the opening is formed;

hardening the insulating layer in which the opening is formed;

forming a hole transporting layer, a light-emitting layer comprising an organic light-emitting material, and an electron transporting layer over the first electrode and the insulating layer; and

forming a second electrode over the light-emitting layer.

8. A method for manufacturing a semiconductor device according to claim 2, wherein the hardening is performed by UV light irradiation and heating.

9. A method for manufacturing a semiconductor device according to claim 2,

wherein the mold comprises a metal material or an insulating material, and

wherein a depression is formed on a surface of the mold.

10. A method for manufacturing a semiconductor device according to claim 2, wherein a surface of the insulating layer in which the opening is formed is hardened before the hardening.