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Method for manufacturing semiconductor device

  • US 20070292986A1
  • Filed: 06/04/2007
  • Published: 12/20/2007
  • Est. Priority Date: 06/14/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a first electrode over a substrate;

    forming an insulating layer containing polysilane over the substrate and the first electrode;

    pressing a mold against the insulating layer to form an opening in the insulating layer, the opening reaching the first electrode;

    separating the mold from the insulating layer in which the opening is formed;

    hardening the insulating layer in which the opening is formed;

    forming a light-emitting layer over the first electrode and the insulating layer; and

    forming a second electrode over the light-emitting layer.

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