Polishing slurry

• US 20070293048A1
• Filed: 06/15/2007
• Published: 12/20/2007
• Est. Priority Date: 06/19/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Hong, Chang-ki, Lee, Jon-won, Yoon, Bo-Un
• Application Number:
  US11/812,140
• Publication Number:
  US 20070293048A1
• Time in Patent Office: Days
• US Class Current: 438/692
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1409 Abrasive particles per se preparation of diamond C01B32/25
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation

Abstract

A polishing slurry, including an oxidizer, a corrosion inhibitor, and a polishing rate enhancer, wherein the polishing rate enhancer is a heterocyclic compound having at least one nitrogen in the ring, and the nitrogen is not directly bonded to a hydrogen atom which is mostly dissociated in the slurry.

Claims

1. A polishing slurry, comprising:

an oxidizer;

a corrosion inhibitor; and

a polishing rate enhancer, wherein the polishing rate enhancer is a heterocyclic compound having at least one nitrogen in the ring, and the nitrogen is not directly bonded to a hydrogen atom which is mostly dissociated in the slurry.

2. The slurry as claimed in claim 1, wherein:

the nitrogen in the ring of the heterocyclic compound has an unshared electron pair.

3. The slurry as claimed in claim 2, wherein the corrosion inhibitor is a heterocyclic aromatic hydrocarbon compound having a nitrogen in the ring, and the nitrogen in the ring of the corrosion inhibitor is directly bonded to a hydrogen atom and is mostly dissociated in the slurry.

4. The slurry as claimed in claim 1, wherein the polishing rate enhancer is one selected from the group consisting of 1-aminopyrazole, 3-amino-1,2,4-triazine, aminothiazole, 2-amino-1,3,4-thiadiazole, 2-aminothiazoline, 2-aminopyrimidine, and 1-(3-aminopropyl)imidazole.

5. The slurry as claimed in claim 1, wherein the polishing rate enhancer is a pyrimidine, pyrazole, pyridazine, pyrazine, pyridine, triazine, thiazole, thiadiazole or an imidazole compound.

6. The slurry as claimed in claim 5, wherein the polishing rate enhancer comprises an amino group.

7. The slurry as claimed in claim 6, wherein the polishing rate enhancer comprises exactly one or two amino groups.

8. The slurry as claimed in claim 5, wherein the corrosion inhibitor is a triazole or tetrazole compound.

9. The slurry as claimed in claim 8, wherein the concentration of the polishing rate enhancer in the slurry is approximately 0.001 mole/L to approximately 0.5 mole/L.

10. The slurry as claimed in claim 9, wherein the concentration of the corrosion inhibitor in the slurry is approximately 0.001 mole/L to approximately 0.1 mole/L.

11. The slurry as claimed in claim 8, wherein the oxidizer is a peroxide.

12. The slurry as claimed in claim 11, wherein the amount of the oxidizer in the slurry is approximately 0.1 wt % to approximately 10 wt %, based on the total weight of the slurry.

13. The slurry as claimed in claim 11, further comprising an inorganic acid, wherein:

the oxidizer is hydrogen peroxide,

the amount of the oxidizer in the slurry is approximately 0.1 wt % to approximately 10 wt %, based on the total weight of the slurry, and

the amount of the inorganic acid in the slurry is approximately 0.5 wt % to approximately 5 wt %, based on the total weight of the slurry.

14. The slurry as claimed in claim 11, further comprising a metal oxide removing compound that includes a carboxyl group.

15. The slurry as claimed in claim 14, wherein the concentration of the metal oxide removing compound in the slurry is 0.001 mole/L to approximately 0.1 mole/L.

16. The slurry as claimed in claim 8, further comprising an abrasive.

17. The slurry as claimed in claim 16, wherein the amount of the abrasive in the slurry is not greater than approximately 1 wt %, based on the total weight of the slurry.

18. A method of manufacturing a device, comprising:

forming a metal pattern on an insulating layer; and

planarizing the metal pattern using a slurry, wherein the slurry includes;

an oxidizer;

a corrosion inhibitor; and

a polishing rate enhancer, wherein the polishing rate enhancer is a heterocyclic compound having at least one nitrogen in the ring, and the nitrogen is not directly bonded to a hydrogen atom which is mostly dissociated in the slurry.

19. A semiconductor device manufactured according to the method as claimed in claim 18.