INTEGRATRED CIRCUIT INCLUDING A TRENCH TRANSISTOR HAVING TWO CONTROL ELECTRODES

• US 20070296029A1
• Filed: 06/08/2007
• Published: 12/27/2007
• Est. Priority Date: 06/09/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz, Siemieniec, Ralf, Roesch, Maximilian
• Granted Patent: US 8,093,655 B2
• Time in Patent Office: Days
• US Class Current: 257/329
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

An integrated circuit including a field effect controllable trench transistor having two-control electrodes is disclosed. One embodiment provides a trench having a first control electrode and a second control electrode. A first electrical line is provided in an edge structure for electrically contact-connecting second control electrode.

Claims

1. An integrated circuit having a trench transistor comprising:

at least one trench formed in a semiconductor body;

a first control electrode formed in the trench;

a second control electrode formed in the trench; and

a first electrical line in an edge structure configured for electrically contact-connecting the second control electrode.

2. The integrated circuit of claim 1, comprising:

where the first control electrode is adjacent the second control electrode.

3. The integrated circuit of claim 1, comprising:

where the first control electrode is coupled to a first control potential;

the second control electrode is coupled to a second control potential; and

the first electrical line is coupled to the second control potential.

4. The integrated circuit of claim 1, comprising:

where the semiconductor body is subdivided into a cell array region having at least one cell array, and where the edge structure at least partially frames the cell array.

5. The integrated circuit of claim 4, comprising:

the semiconductor body being provided with at least one doped first connection zone and at least one doped second connection zone in the cell array; and

a first connection electrode connected to the first connection zone and serving for the application of a first supply potential, and a second connection electrode connected to the second connection zone and serving for the application of a second supply potential.

6. The integrated circuit of claim 5, comprising wherein the first connection electrode in the cell array serves for contact-connecting at least one second control electrode which is not contact-connected by the first electrical line in the edge structure.

7. The integrated circuit of claim 1, comprising wherein the trench extends into the edge structure of the trench transistor.

8. An integrated circuit having a field effect controllable trench transistor, comprising:

a semiconductor body having a cell array region having at least one cell array and an edge structure;

a plurality of trenches formed in the semiconductor body;

a first control electrode, formed in each trench;

a second control electrode, arranged adjacent to and separate from the first control electrode in each trench;

the trenches and the first and second control electrodes in the trenches extending laterally right into the edge structure; and

a first electrical line formed in the edge structure having there first contact means, which electrically contact-connect the first electrical line in the edge structure to a selectable number of the second control electrodes.

9. An integrated circuit comprising:

a semiconductor body, subdivided into a cell array region having at least one cell array and into an edge structure framing the cell array, the semiconductor body being provided with at least one doped first connection zone and at least one doped second connection zone in the cell array;

a first connection electrode connected to the first connection zone and serving for the application of a first supply potential, and a second connection electrode connected to the second connection zone and serving for the application of a second supply potential;

at least one trench formed in the semiconductor body;

a first control electrode, formed in the trench, the first control electrode being insulated from the semiconductor body by a first insulation layer and being able to be connected to a first control potential;

a second control electrode, arranged adjacent to the first control electrode in the trench, the second control electrode being arranged in the semiconductor body in a manner insulated by a second insulation layer and being able to be connected to a second control potential; and

a first electrical line connected to the second control potential in the edge structure for electrically contact-connecting at least one second control electrode.

10. The integrated circuit of claim 9, comprising wherein the first connection electrode in the cell array serves for contact-connecting at least one second control electrode which is not contact-connected by the first electrical line in the edge structure.

11. The integrated circuit of claim 10, comprising wherein the second control electrodes are contact-connected by the first connection electrode in the cell array and by the first electrical line in the edge structure in a lateral direction perpendicular to the extension direction of trenches with a selectable contact-connection scheme that is repeated substantially periodically in this direction.

12. The integrated circuit of claim 9, comprising a second electrical line in the edge structure for electrically contact-connecting at least one second control electrode that is not contact-connected by the first electrical line.

13. The integrated circuit of claim 12, comprising wherein the second control electrodes are contact-connected by the first electrical line in the edge structure and by the second electrical line in the edge structure in a lateral direction perpendicular to the extension direction of trenches with a selectable contact-connection scheme that is repeated substantially periodically in this direction.

14. The integrated circuit of claim 9, comprising wherein the second electrical line is electrically conductively connected to the first connection electrode.

15. The integrated circuit of claim 9, comprising wherein the first electrical line in the edge structure serves for contact-connecting the first control electrodes.

16. The integrated circuit of claim 9, comprising wherein the at least one second control electrode is contact-connected by using the first electrical line in the edge structure through an electrical contact formed in a contact hole.

17. The integrated circuit of claim 9, comprising wherein the at least one second control electrode is contact-connected by using the second electrical line in the edge structure through an electrical contact formed in a contact hole.

18. The integrated circuit of claim 9, comprising wherein the trench extends right into the edge structure of the trench transistor.

19. An integrated circuit comprising:

a semiconductor body having a cell array region having at least one cell array and an edge structure framing the cell array, the semiconductor body being provided with at least one doped first connection zone and at least one doped second connection zone in the cell array; and

a first supply potential being able to be applied to the first connection zone by using a first connection electrode, and a second supply potential being able to be applied to the second connection zone by using a second connection electrode;

a plurality of trenches formed in the semiconductor body;

a first control electrode formed in each trench, the first control electrode being insulated from the semiconductor body by a first insulation layer in each trench;

a second control electrode arranged adjacent to and separate from the first control electrode in each trench, the second control electrode being insulated from the semiconductor body and from the first control electrode by a second insulation layer in each trench;

the trenches and the first and second control electrodes in the trenches extending laterally right into the edge structure; and

a first electrical line formed in the edge structure having there a selectable number of first contact means which electrically contact-connect the first electrical line in the edge structure to a selectable number of the second control electrodes.

20. The integrated circuit of claim 19, comprising wherein not all of the second control electrodes are contact-connected to the first electrical line in the edge structure by the first contact means;

and

in which the first connection electrode, in the cell array, is contact-connected to at least one of the second control electrodes which is not contact-connected to the first electrical line in the edge structure by the first contact means.

21. The integrated circuit of claim 19, comprising wherein not all of the second control electrodes are contact-connected to the first electrical line in the edge structure by the first contact means;

and

in which a second electrical line formed in the edge structure has there second contact means for electrically contact-connecting at least one of the second control electrodes that are not contact-connected by the first electrical line.

22. The integrated circuit of claim 19, comprising wherein the first electrical line in the edge structure has third contact means, which contact-connect the first electrical line to the first control electrodes there.

23. The integrated circuit of claim 19, comprising wherein the first contact means for respectively electrically contact-connecting one or a plurality of the second control electrodes to the first electrical line in each case have an electrical contact formed in a contact hole.