Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method

• US 20070296940A1
• Filed: 08/10/2007
• Published: 12/27/2007
• Est. Priority Date: 10/08/2003
• Status: Active Grant

• Current Assignee: Nikon Corporation, Zao Nikon Co. Ltd. (Nikon Corporation)
• Original Assignee: Nikon Corporation, Zao Nikon Co. Ltd. (Nikon Corporation)
• Inventors: Horiuchi, Takashi, Ohta, Atsushi
• Granted Patent: US 8,107,055 B2
• Time in Patent Office: Days
• US Class Current: 355/53
• CPC Class Codes: G03B 27/42 for automatic sequential copying of the same original G03B27/34, G03B27/53 take precedence
• CPC Class Codes: G03D 3/00 Liquid processing apparatus involving immersion; Washing apparatus involving immersion G03D9/00, G03D11/00 take precedence
• CPC Class Codes: G03F 7/2041 in the presence of a fluid, e.g. immersion; using fluid cooling means
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/7075 Handling workpieces outside exposure position, e.g. SMIF box

Abstract

A method of pattern forming includes forming a resist film on a substrate, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after said forming the latent image, developing the resist film after the first inspection, and performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection.

Claims

1. A method of pattern forming comprising:

forming a resist film on a substrate;

transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film;

conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after said forming the latent image;

developing the resist film after the first inspection; and

performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection.

2. The method according to claim 1, wherein positional information of the residual of the liquid immersion fluid is obtained during the first inspection;

and

a second inspection is conducted in accordance with the positional information.

3. The method according to claim 1, further comprising implementing processing to remove the liquid immersion fluid remaining on the resist film.

4. The method according to claim 1, further comprising forming a cover film on the resist film before said forming the latent image.

5. A method of manufacturing a semiconductor device, comprising:

forming a resist film on a semiconductor substrate;

transferring a semiconductor device pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film;

conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after the formation of the latent image;

implementing post exposure bake for the resist film after the first inspection;

developing the resist film after the post exposure bake; and

performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection.

6. The method according to claim 5, wherein positional information of the residual of the liquid immersion fluid is obtained in the first inspection;

and

a second inspection is conducted in accordance with the positional information.

7. The method according to claim 5, further comprising implementing processing to remove the liquid immersion fluid remaining on the resist film.

8. The method according to claim 5, further comprising forming a cover film on the resist film before the formation of the latent image.