Vertical Field-Effect Transistor and Method of Forming the Same
First Claim
1. A method of forming a semiconductor device, comprising:
- forming a vertical field-effect transistor, including;
forming a heavily doped substrate,forming a source/drain contact below said heavily doped substrate,forming a channel layer above said heavily doped substrate,forming a heavily doped source/drain layer above said channel layer,forming another source/drain contact above said heavily doped source/drain layer,patterning and etching pillar regions through said another source/drain contact, said heavily doped source/drain layer, and portions of said channel layer to form a vertical cell,forming non-conductive regions in said portions of said channel layer within said pillar regions, andforming a gate above said non-conductive regions in said pillar regions; and
forming a Schottky diode, including;
forming a Schottky contact on an exposed surface of said channel layer to provide an anode configured to cooperate with said channel layer to provide a cathode for said Schottky diode.
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Accused Products
Abstract
A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.
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Citations
30 Claims
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1. A method of forming a semiconductor device, comprising:
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forming a vertical field-effect transistor, including; forming a heavily doped substrate, forming a source/drain contact below said heavily doped substrate, forming a channel layer above said heavily doped substrate, forming a heavily doped source/drain layer above said channel layer, forming another source/drain contact above said heavily doped source/drain layer, patterning and etching pillar regions through said another source/drain contact, said heavily doped source/drain layer, and portions of said channel layer to form a vertical cell, forming non-conductive regions in said portions of said channel layer within said pillar regions, and forming a gate above said non-conductive regions in said pillar regions; and forming a Schottky diode, including; forming a Schottky contact on an exposed surface of said channel layer to provide an anode configured to cooperate with said channel layer to provide a cathode for said Schottky diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a vertical field-effect transistor, including; a heavily doped substrate, a source/drain contact below said heavily doped substrate, a channel layer above said heavily doped substrate, a heavily doped source/drain layer above said channel layer, another source/drain contact above said heavily doped source/drain layer, pillar regions through said another source/drain contact, said heavily doped source/drain layer, and portions of said channel layer to form a vertical cell therebetween, non-conductive regions in said portions of said channel layer within said pillar regions, and a gate above said non-conductive regions in said pillar regions; and a Schottky diode, including; a Schottky contact on an exposed surface of said channel layer to provide an anode configured to cooperate with said channel layer to provide a cathode for said Schottky diode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A power converter coupled to a source of electrical power and configured to provide a regulated output characteristic, comprising:
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a semiconductor device, including; a power switch formed as a vertical field-effect transistor, including; a heavily doped substrate, a source/drain contact below said heavily doped substrate, a channel layer above said heavily doped substrate, a heavily doped source/drain layer above said channel layer, another source/drain contact above said heavily doped source/drain layer, pillar regions through said another source/drain contact, said heavily doped source/drain layer, and portions of said channel layer to form a vertical cell therebetween, non-conductive regions in said portions of said channel layer within said pillar regions, and a gate above said non-conductive regions in said pillar regions, and a Schottky diode, including; a Schottky contact on an exposed surface of said channel layer to provide an anode configured to cooperate with said channel layer to provide a cathode for said Schottky diode; a controller configured to control conduction intervals of said power switch to provide said regulated output characteristic; and an output filter coupled to said power switch to filter said output characteristic. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification