DIELECTRIC DEPOSITION AND ETCH BACK PROCESSES FOR BOTTOM UP GAPFILL
First Claim
1. A method to reduce film cracking in a dielectric layer, the method comprising:
- depositing a first dielectric film on a substrate;
removing a top portion of the first dielectric film by performing an etch on the film;
depositing a second dielectric film over the etched first film;
removing a top portion of the second dielectric film; and
annealing the first and second dielectric films to form the dielectric layer, wherein the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
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Abstract
Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.
191 Citations
54 Claims
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1. A method to reduce film cracking in a dielectric layer, the method comprising:
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depositing a first dielectric film on a substrate;
removing a top portion of the first dielectric film by performing an etch on the film;
depositing a second dielectric film over the etched first film;
removing a top portion of the second dielectric film; and
annealing the first and second dielectric films to form the dielectric layer, wherein the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method filling a trench with a dielectric material, the method comprising:
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filling the trench with a film of the dielectric material, wherein the dielectric film is formed by;
combining a first fluid stream comprising atomic oxygen with a second fluid stream comprising a silicon-containing precursor, and reacting the atomic oxygen and the silicon-containing precursor to form the dielectric film in the trench;
removing a top portion of the dielectric film by etching the film; and
annealing the etched film. - View Dependent Claims (24, 25, 26, 27, 28, 29)
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30. A method to reduce film cracking in a dielectric layer, the method comprising:
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depositing a first dielectric film on a substrate;
performing a first anneal on the first film;
removing a top portion of the annealed first film by performing a first etch on the first film;
depositing a second dielectric film over the etched first film;
removing a top portion of the second dielectric film by performing a second etch on the second film; and
performing a second anneal of the first and second dielectric films and forming the dielectric layer, wherein the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A multistep deposition method for filling a gap on a semiconductor substrate with dielectric material, the method comprising:
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depositing a first dielectric film in a bottom portion of the gap;
annealing the first dielectric film in a first anneal;
depositing a second dielectric film on the annealed first dielectric film; and
annealing the second dielectric film in a second anneal. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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Specification