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RF POWER AMPLIFIER

  • US 20070298736A1
  • Filed: 06/18/2007
  • Published: 12/27/2007
  • Est. Priority Date: 06/19/2006
  • Status: Active Grant
First Claim
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1. An RF power amplifier comprising:

  • a first amplification device; and

    a second amplification device;

    wherein the first and second amplification devices are formed on a common semiconductor chip as final-stage amplification power devices connected in parallel between an input terminal and an output terminal, a first bias voltage of an input terminal of the first amplification device is set to be higher than a second bias voltage of an input terminal of the second amplification device so that the first amplification device is operational in any one of operating classes between Class B with a conduction angle of π

    (180°

    ) and Class AB with a conduction angle of π

    (180°

    ) to 2π

    (360°

    ), and the second amplification device is operational in Class C with a conduction angle below π

    (180°

    ), and a first effective device size of the first amplification device is intentionally set to be smaller than a second effective device size of the second amplification device beyond a range of a manufacturing error of the semiconductor chip.

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