Removal of organic-containing layers from large surface areas

• US 20080000497A1
• Filed: 06/30/2006
• Published: 01/03/2008
• Est. Priority Date: 06/30/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Verhaverbeke, Steven
• Application Number:
  US11/479,349
• Publication Number:
  US 20080000497A1
• Time in Patent Office: Days
• US Class Current: 134/1.1
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A method of removing organic-containing layers, such as photoresists, high temperature organic layers, or organic dielectric materials, from large surface area substrates by plasma treatment at or near atmospheric pressure, wherein said large surface area substrate is transported on a conveyor belt system during said plasma treatment. The plasma is typically principally comprised of a chemically non-reactive species, such as helium. The method can be integrated in-line with the wet strip and/or wet clean, or it can be used in a stand alone system. The apparatus for carrying out the method is also described.

Claims

1. A method of removing an organic-containing layer from a surface of a large surface area substrate by a plasma treatment at or near atmospheric pressure, wherein said substrate travels through a plasma processing area on a conveyor belt, and wherein said plasma comprises chemically non-reactive species ranging in concentration from about 95% to about 100% of the plasma and chemically reactive species ranging in concentration from about 0.005% to 4.75% of the plasma.

2. A method in accordance with claim 1, wherein said large surface area substrate is a large flat panel surface that is comprised of glass.

3. A method in accordance with claim 2, wherein said large surface area substrate ranges in length from about 300 mm to about 2500 mm and ranges in width from about 300 mm to about 2500 mm.

4. A method in accordance with claim 3, wherein the large surface area ranges in length from about 500 mm to about 2160 mm and ranges in width from about 500 mm to about 2400 mm.

5. A method in accordance with claim 2 or claim 3, wherein a thickness of said large area substrate ranges from about 0.5 mm to about 1 mm.

6. A method in accordance with claim 5, wherein a thickness of said organic-containing layer ranges from about 0.5 μ

m to about 2 μ

m.

7. A method in accordance with claim 1, wherein said organic-containing layer is selected from the group consisting of photoresist material, high temperature organic material, and organic dielectric material.

8. A method in accordance with claim 7, wherein the organic-containing layer is photoresist material.

9. A method in accordance with claim 1, wherein said chemically non-reactive species is helium (He).

10. A method in accordance with claim 1 or claim 9, wherein a chemically reactive species is oxygen (O₂).

11. A method in accordance with claim 10, wherein a concentration of said O₂ ranges from about 0.5% to 4.75%.

12. A method in accordance with claim 9, wherein said chemically reactive species is selected from the group consisting of nitrogen trifluoride (NF₃), tetrafluoromethane (CF₄), ammonia (NH₃), silane (SiH₄), and combinations thereof.

13. A method in accordance with claim 12, wherein a concentration of said chemically reactive species ranges from about 0.005% to about 0.015%.

14. A method in accordance with claim 1, wherein RF power at a frequency of about 27 MHz or at a frequency of about 54 MHz is used for the generation of said plasma.

15. A method in accordance with claim 1, wherein a curtain of gas is used to create a dynamic seal to prevent leakage of said chemically non-reactive species and said chemically reactive species of the plasma from said plasma processing area.

16. A method in accordance with claim 15, wherein said curtain of gas is air or an inert gas.

17. A method in accordance with claim 13, wherein said inert gas is helium.

18. A method in accordance with claim 1, wherein gases and species from said plasma processing area are recycled for reuse.

19. An apparatus for removing an organic-containing layer from a surface of a large surface area substrate by exposing said organic-containing layer to a plasma at or near atmospheric pressure, wherein said apparatus comprises a conveyor belt system for transportation of said substrate, a plasma processing area into which plasma source gases for creating chemically non-reactive species and chemically reactive species are supplied, wherein an RF power source is applied to create said plasma.

20. An apparatus for removing an organic-containing layer from a large surface area substrate by exposure of said organic-containing layer to a plasma at or near atmospheric pressure, wherein said apparatus comprises:

(1) a plasma processing enclosure;

(2) a conveyor belt which passes through the plasma processing enclosure;

(3) a gas inlet in the plasma processing enclosure for the introduction of a plasma source gas mixture used for the generation of the plasma;

(4) a plasma generating electrode which is positioned about 3 mm to about 15 mm apart from the surface of a large area substrate which is processed in said plasma processing enclosure;

(5) gas inlets and outlets on the two opposing sides of the plasma processing enclosure for generating a dynamic seal gas curtain around the plasma processing area;

(6) an RF power source with a frequency of about 27 MHz or about 54 MHz; and

(7) a means for recycling said plasma source gas used for the generation of said plasma.

21. An apparatus in accordance with claim 20, wherein a grounding metal electrode plate is located beneath said large surface area substrate.

22. An apparatus in accordance with claim 21, wherein said grounding metal electrode plate is located beneath said conveyor belt.

23. An apparatus in accordance with claim 22, wherein the conveyor belt is composed of electrically conductive material.

24. An apparatus in accordance with claim 20, wherein said apparatus includes a plasma source gas distribution manifold.

25. An apparatus in accordance with claim 24, wherein said plasma source gas distribution manifold also functions as said plasma generating electrode.