Integrating a bottomless via to promote adsorption of antisuppressor on exposed copper surface and enhance electroplating superfill on noble metals
First Claim
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1. A method comprising:
- forming an opening in a dielectric layer disposed on a substrate;
forming a barrier layer on the opening; and
forming a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy.
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Abstract
A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.
41 Citations
26 Claims
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1. A method comprising:
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forming an opening in a dielectric layer disposed on a substrate; forming a barrier layer on the opening; and forming a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 13, 14)
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10. (canceled)
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12. (canceled)
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15. A method comprising:
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forming an opening in a dielectric layer disposed on a copper interconnect of a substrate; forming a barrier layer on the opening; forming a seed layer on the barrier layer, the seed layer comprising a noble metal; and etching the barrier layer and the seed layer at the bottom of the opening to expose the underlying copper interconnect. - View Dependent Claims (16, 17, 18, 19, 20, 25, 26)
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21. An apparatus comprising:
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a dielectric layer having an opening; a barrier layer on the opening; and a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy layer. - View Dependent Claims (22)
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23. An apparatus comprising:
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a dielectric layer having an opening, the dielectric layer disposed on a copper interconnect of a substrate; a barrier layer formed on the opening; and a seed layer formed on the barrier layer, the seed layer having a noble metal or a noble metal-copper alloy, the bottom of the opening exposing copper from the copper interconnect. - View Dependent Claims (24)
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Specification