Method of fabricating vertical structure leds
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Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
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Citations
61 Claims
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1-42. -42. (canceled)
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43. A vertical light emitting device, comprising:
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a support layer;
a first-type GaN based layer over the support layer;
a first electrode disposed between the support layer and the first-type GaN based layer such that the first-type GaN based layer is over the first electrode;
a second-type GaN based layer over the first-type GaN based layer;
a light emitting layer disposed between the first-type GaN based layer and the second GaN based layer;
an undoped GaN based layer over the second-layer GaN based layer; and
a second electrode over the second-type GaN based layer or the undoped GaN based layer, wherein the first electrode and the second electrode are respectively located at an opposite side of the light emitting layer - View Dependent Claims (44, 45, 46, 47, 48, 49)
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50. A vertical light emitting device, comprising;
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a support layer;
a first-type GaN based layer over the support layer;
a first electrode disposed between the support layer and the first-type GaN based layer;
a second-type GaN based layer thicker than the first-type GaN based layer over the first-type GaN based layer;
a light-emitting layer disposed between the first-type GaN based layer and the second-type GaN based layer; and
a second electrode over the second-type GaN based layer, wherein the first electrode and the second electrode are respectively located at an opposite side of the light-emitting layer. - View Dependent Claims (51, 52, 53, 54, 55, 56)
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57. A vertical light emitting device, comprising;
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a support layer;
a first electrode over the support layer;
a semiconductor layer having a multilayer structure;
a cover layer covering at least one exposed portions of the semiconductor layer, the cover layer includes at least one function of protection and insulation for the semiconductor layer; and
a second electrode over the semiconductor layer, wherein the first electrode and the second electrode are respectively located at an opposite side of the semiconductor layer. - View Dependent Claims (58, 59, 60, 61)
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Specification