Lattice-mismatched semiconductor structures and related methods for device fabrication

• US 20080001169A1
• Filed: 03/23/2007
• Published: 01/03/2008
• Est. Priority Date: 03/24/2006
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: AmberWave Systems Corporation
• Inventors: Lochtefeld, Anthony
• Granted Patent: US 7,777,250 B2
• Time in Patent Office: Days
• US Class Current: 257/190
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02538 Group 13/15 materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.

Claims

1. A structure including lattice-mismatched materials, the structure comprising:

a substrate including a first crystalline material and having a top substrate surface;

a non-crystalline mask layer disposed above the substrate, the non-crystalline mask layer having a top surface and an opening defined by sidewalls extending from the top surface of the non-crystalline mask layer to the top substrate surface;

a second crystalline material disposed in the opening, the second crystalline material having a lattice mismatch to the first crystalline material and a thickness sufficient to permit a majority of defects arising from the lattice mismatch to exit the second crystalline material at the sidewalls; and

a third crystalline material disposed above the second crystalline material and defining a junction therebetween, the junction confining selected charge carriers to one side of the junction.

2. A structure including lattice-mismatched materials comprising:

a substrate comprising a first crystalline semiconductor material;

a second crystalline semiconductor material having a lattice mismatch to the substrate, the second crystalline semiconductor material being disposed on the substrate in a predetermined configuration defining a top surface and a lateral sidewall surface extending from a top surface of the substrate to the top surface defined by the predetermined configuration, the sidewall surface having a height above the substrate top surface sufficient to permit a majority of defects arising from the lattice mismatch to exit the second crystalline semiconductor material at the lateral sidewall surface; and

a third crystalline semiconductor material substantially lattice matched with the second crystalline material, the third crystalline material being disposed on at least a portion of the sidewall surface of the second crystalline material to define an outer sidewall surface.

3. A structure including lattice-mismatched materials comprising:

a substrate including a first crystalline semiconductor material;

a mask layer disposed above the substrate, the mask layer having a top surface and a plurality of openings defined by sidewalls extending through the mask layer from the top surface to the substrate;

a second crystalline material disposed within each of the openings and having a lattice mismatch to the first crystalline material and a thickness sufficient to permit a majority of defects arising from the lattice mismatch to exit the second material at the sidewalls; and

a third crystalline semiconductor material disposed within the openings above the second crystalline material and defining a junction in each opening for confining selected charge carriers to one side of the junction.

4. A structure including lattice-mismatched materials, the structure comprising:

a substrate comprising a first crystalline material;

a first non-crystalline mask layer disposed over the substrate, the first non-crystalline mask layer including a first window exposing at least a portion of the substrate; and

a second crystalline material disposed in the window, the second crystalline material having a lattice mismatch to the first crystalline material, the lattice mismatch inducing strain in the second crystalline material,

wherein (i) an area of the window exposing at least a portion of the substrate is sufficiently small to permit elastic relaxation of the second crystalline material without introduction of strain-related defects, and (ii) a thickness of the second crystalline material is sufficiently high such that an inner region of the second crystalline material is partially relaxed and relieves strain from the lattice mismatch, and an outer region of the second crystalline material is substantially relaxed.

5. A structure including lattice-mismatched materials, the structure comprising:

a substrate including a first crystalline material;

a non-crystalline mask layer disposed above the substrate, the mask layer having a top surface and a plurality of openings defined by sidewalls extending from the top surface of the non-crystalline mask layer to a top surface of the substrate;

a second crystalline material disposed in the openings, the second crystalline material having a lattice mismatch to the first crystalline material and a thickness sufficient to permit a majority of defects arising from the lattice mismatch to exit the second material at the sidewalls; and

a third crystalline material disposed above the second crystalline material, the third crystalline material disposed in each opening being non-contiguous with the third crystalline material disposed in other openings.

6. A structure including lattice-mismatched materials, the structure comprising:

a substrate including a first crystalline material and having a top substrate surface;

a non-crystalline mask layer disposed above the substrate, the non-crystalline mask layer having a top surface and an opening defined by sidewalls extending from the top surface of the non-crystalline mask layer to the top substrate surface;

a second crystalline material disposed in the opening, the second crystalline material having a lattice mismatch to the first crystalline material and a thickness sufficient to permit a majority of defects arising from the lattice mismatch to exit the second crystalline material at the sidewalls; and

a third crystalline material disposed above the second crystalline material and defining a junction therebetween,

wherein the second and third crystalline materials are substantially lattice matched.

7. A structure including lattice-mismatched materials comprising:

a substrate including a first crystalline semiconductor material;

a mask layer disposed above the substrate, the mask layer having a top surface and a plurality of openings defined by sidewalls extending through the mask layer from the top surface to the substrate;

a second crystalline material disposed within each of the openings and having a lattice mismatch to the first crystalline material and a thickness sufficient to permit a majority of defects arising from the lattice mismatch to exit the second material at the sidewalls; and

a third crystalline semiconductor material disposed within the openings above the second crystalline material and defining a junction in each opening,

wherein the second and third crystalline materials are substantially lattice matched.

8-13. -13. (canceled)