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Semiconductor device having superjunction structure and method for manufacturing the same

  • US 20080001217A1
  • Filed: 06/28/2007
  • Published: 01/03/2008
  • Est. Priority Date: 07/03/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a drift region of a first conductivity type including an active element region and a peripheral region formed around said active element region;

    a first trench formed in said peripheral region;

    a second trench formed in said active element region;

    a gate insulating film and a gate electrode formed in each of said first and second trenches;

    a base region of a second conductivity type formed at least in said active element region;

    a plurality of column regions of said second conductivity type selectively formed separately from one another in each of said active element region and said peripheral region to thereby form a parallel p-n layer that comprises a portion of said drift region and selected ones of said column regions;

    a source region of said first conductivity type formed in said base region; and

    a guard region of said second conductivity type formed below at least a portion of said first trench closest to said active element region, said guard region being free from being formed below said second trench.

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