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Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming same

  • US 20080001237A1
  • Filed: 06/29/2006
  • Published: 01/03/2008
  • Est. Priority Date: 06/29/2006
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a substantially nitrogen-free interfacial layer on said substrate;

    a nitrogen-containing high dielectric constant (high-k) layer directly on said interfacial layer; and

    a metal electrode on said nitrogen-containing high-k layer.

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