Rectangular Semi-Conducting Support for Microelectronics and Method for Making Same
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Abstract
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack successively comprises a single-crystal diamond layer, an electrically insulating oxide layer and a semi-conducting layer. The support can comprise a second stack arranged on the rear surface of the substrate and comprising the same succession of layers as the first stack or comprising a polymer material layer. A thermal connection passing through the first and/or second stacks and connecting the graphite substrate to an external surface of the support enables heat to be removed. The method can comprise production of the semi-conducting layer by molecular bonding of rectangular silicon strips onto the oxide layer.
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36 Claims
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1-18. -18. (canceled)
- 19. Semi-conducting support for microelectronics, comprising a rectangular graphite substrate having a front surface and a rear surface, and at least one semi-conducting layer arranged on the front surface of the substrate, support comprising at least a first stack arranged on the front surface of the substrate and successively comprising a single-crystal diamond layer, an electrically insulating oxide layer having a high dielectric constant and the semi-conducting layer.
Specification