DEPOSITION OF COMPLEX NITRIDE FILMS
First Claim
1. A method for the depositing a nitride-containing film onto a substrate, comprising:
- providing a substrate in a reaction chamber;
heating the substrate in the reaction chamber;
flowing a first metal halide precursor into the reaction chamber in temporally separated pulses;
flowing a second metal halide precursor into the reaction chamber in temporally separated pulses; and
flowing a nitrogen containing precursor into the reaction chamber, wherein flowing the nitrogen-containing precursor comprises;
flowing the nitrogen-containing precursor during the pulses of the first and second metal halide precursors to induce a thermally activated reaction between at least one of the metal halide precursors and the nitrogen-containing precursor, and flowing the nitrogen containing precursor between the pulses of the first and the second metal halide precursors.
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Accused Products
Abstract
Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300° C. and about 700° C.
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Citations
16 Claims
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1. A method for the depositing a nitride-containing film onto a substrate, comprising:
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providing a substrate in a reaction chamber;
heating the substrate in the reaction chamber;
flowing a first metal halide precursor into the reaction chamber in temporally separated pulses;
flowing a second metal halide precursor into the reaction chamber in temporally separated pulses; and
flowing a nitrogen containing precursor into the reaction chamber, wherein flowing the nitrogen-containing precursor comprises;
flowing the nitrogen-containing precursor during the pulses of the first and second metal halide precursors to induce a thermally activated reaction between at least one of the metal halide precursors and the nitrogen-containing precursor, and flowing the nitrogen containing precursor between the pulses of the first and the second metal halide precursors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification