Metal organic chemical vapor deposition equipment

• US 20080006208A1
• Filed: 07/03/2007
• Published: 01/10/2008
• Est. Priority Date: 07/05/2006
• Status: Abandoned Application

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Ueno, Masaki, Ueda, Toshio, Takasuka, Eiryo
• Application Number:
  US11/822,188
• Publication Number:
  US 20080006208A1
• Time in Patent Office: Days
• US Class Current: 118/730
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/45504 Laminar flow
• CPC Class Codes: C23C 16/45585 Compression of gas before it reaches the substrate
• CPC Class Codes: C30B 25/165 the flow of the reactive gases
• CPC Class Codes: C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

Claims

1. Metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, comprising:

a heating component heating said substrate and having a holding surface for holding said substrate; and

a flow channel for introducing said reactant gas to said substrate, wherein

said heating component is rotatable with said holding surface kept facing an inner portion of said flow channel, and

a height of said flow channel along a flow direction of said reactant gas is kept constant from an upstream side lateral end of a position for holding said substrate at said holding surface to an arbitrary position of said holding surface, and is monotonically decreased from said arbitrary position to a downstream side.

2. The metal organic chemical vapor deposition equipment according to claim 1, wherein monotonic decrease in height of said flow channel terminates at a position located on the downstream side of a position located on an upstream side of a downstream side lateral end of said substrate holding position by 2%.

3. The metal organic chemical vapor deposition equipment according to claim 2, wherein the monotonic decrease in height of said flow channel terminates at any of a position of said downstream side lateral end and a position located on the downstream side of the position of said downstream side lateral end.

4. The metal organic chemical vapor deposition equipment according to claim 1, wherein a height of said flow channel along a width direction is monotonically decreased at said holding surface from each end portion to a central portion of said holding surface.

5. The metal organic chemical vapor deposition equipment according to claim 4, wherein the height of said flow channel along the width direction is monotonically decreased in a curved manner.

6. The metal organic chemical vapor deposition equipment according to claim 1, wherein

said flow channel has a bottleneck portion on an upstream side of said arbitrary position, and

the height of said flow channel along the flow direction of said reactant gas at said bottleneck portion is once decreased and then increased.