Resist, Barc and Gap Fill Material Stripping Chemical and Method

• US 20080006305A1
• Filed: 12/01/2004
• Published: 01/10/2008
• Est. Priority Date: 12/02/2003
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Miyazawa, Tomoe, Nakajima, Makoto, Bernhard, David D., Fujita, Yoichiro
• Granted Patent: US 7,888,301 B2
• Time in Patent Office: Days
• US Class Current: 134/42
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/044 Hydroxides or bases
• CPC Class Codes: C11D 3/245 containing fluorine
• CPC Class Codes: C11D 3/30 Amines; Substituted amines ; Quaternized amines
• CPC Class Codes: C11D 3/43 Solvents
• CPC Class Codes: C11D 7/10 Salts
• CPC Class Codes: C11D 7/28 containing halogen
• CPC Class Codes: C11D 7/3209 Amines or imines with one to four nitrogen atoms; Quaternized amines
• CPC Class Codes: C11D 7/5004 Organic solvents
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: G03F 7/425 containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

Claims

1. An aqueous-based removal composition comprising a fluoride source, at least one organic amine, at least one organic solvent, water, optionally at least one chelating agent, and optionally at least one surfactant, wherein said composition is useful for removing photoresist, bottom anti-reflective coating (BARC) materials, and/or gap fill materials from a substrate having such material(s) thereon.

2. The composition of claim 1, wherein the at least one organic amine comprises N-(2-cyanoethyl)ethylenediamine.

3. The composition of claim 1, wherein the fluoride source comprises a fluoride-containing compound selected from the group consisting of ammonium fluoride, hydrogen fluoride, ammonium bifluoride, tetraalkylammonium difluoride, alkyl phosphonium di fluoride, and triethylamine trihydrofluoride.

4. The composition of claim 1, wherein the fluoride source comprises ammonium fluoride.

5. The composition of claim 2, further comprising at least one additional organic amine.

6. The composition of claim 5, wherein the at least one additional organic amine comprises an amine-containing compound selected from the group consisting of hydroxyethylpiperazine, hydroxypropylpiperazine, aminoethylpiperazine, aminopropylpiperazine, hydroxyethylmorpholine, hydroxypropylmorpholine, aminoethylmorpholine, aminopropylmorpholine, triethanolamine, pentamethyldiethylenetriamine, dimethylaminoethoxyethanol, aminoethoxyethanol, ethylene urea, trimethylaminoethylethanolamine, trimethylaminopropylethanolamine, and N-(2-cyanopropyl) ethylenediamine.

7. The composition of claim 1, wherein the at least one organic solvent comprises a compound selected from the group consisting of 1,4-butanediol, 1,3-butanediol, ethylene glycol, propylene glycol, N-methyl-2-pyrrolidone, DMSO, r-butyrolactone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethyleneglycol monobenzylether, ethyl lactate, ammonium lactate, and dimethyl acetamide.

8. The composition of claim 1, wherein the at least one organic solvent comprises propylene glycol monomethyl ether.

9. The composition of claim 1, comprising chelating agent.

10. The composition of claim 9, wherein the chelating agent comprises a compound selected from the group consisting of iminodiacetic acid, boric acid, ammonium borate, ammonium tetraborate, gluconic acid, mannitol, and sorbitol.

11. The composition of claim 1, comprising surfactant.

12. The composition of claim 11, wherein the surfactant comprises a compound selected from the group consisting of:

(C₁-C₁₅) alkyl glucosides;

(C₁-C₁₅) alkyl ethylene oxide/propylene oxide;

(C₁-C₁₀) alkyl phenoxy ethylene oxide/propylene oxide; and

oxirane, methyl-, polymer with oxirane, ether with 2,2′

-(oxidoimino)bis(ethanol) (2;

1) and N(-3-(C(-11-isoalkyloxy)propyl) derivatives.

13. The composition of claim 11, wherein the surfactant comprises a compound selected from the group consisting of decyl glucoside, AO-405, AO-455, CA-520, CO-630, CA-720 and CO-890, CO-210, CO-520, CO-990 and DM-970.

15. The composition of claim 1, selected from the group consisting of Formulations F, wherein all percentages are by weight, based on total weight of the formulation:

Formulation A

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.05% decyl glucoside;

Formulation B

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 25% propylene glycol monomethyl ether; and

about 30% de-ionized water;

Formulation C

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 24% propylene glycol monomethyl ether;

about 30% de-ionized water; and

about 1% ammonium tetraborate;

Formulation D

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% alkyl EOPO amine oxide surfactant;

Formulation E

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% EO octylphenol surfactant; and

Formulation F

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% EO nonylphenol surfactant;

wherein the total of the weight percentages of such components of the composition does not exceed 100% by weight.

16. The composition of claim 1, comprising the following components, based on total weight of the composition:

0.1% wt.-15.0% wt. fluoride source;

20.0% wt.-60.0% wt. total organic amine;

1.0% wt.-60.0% wt. total organic solvent;

20.0% wt.-70.0% wt. water;

20.0% wt. chelating agent; and

0.000% wt.-5.0% wt. surfactant,

wherein the total of the weight percentages of such components of the composition does not exceed 100% by weight.

17. The composition of claim 1, wherein the pH of the composition is in a range from about 5 to about 9.

44. The composition of claim 1, wherein the at least one additional organic amine comprises an amine-containing compound selected from the group consisting of hydroxyethylpiperazine, hydroxypropylpiperazine, aminoethylpiperazine, aminopropylpiperazine, hydroxyethylmorpholine, hydroxypropylmorpholine, aminoethylmorpholine, aminopropylmorpholine, triethanolamine, pentamethyldiethylenetriamine, dimethylaminoethoxyethanol, aminoethoxyethanol, ethylene urea, trimethylaminoethylethanolamine, trimethylaminopropylethanolamine, and N-(2-cyanopropyl) ethylenediamine.

14. (canceled)

18. A method of removing photoresist, BARC material, and/or gap fill material from a substrate having said material(s) thereon, said method comprising contacting the substrate with an aqueous-based removal composition for sufficient time to at least partially remove said material from the substrate, wherein the aqueous-based removal composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, optionally at least one chelating agent, and optionally at least one surfactant.

20. The method of claim 18, wherein the substrate comprises a semiconductor device structure.

25. The method of claim 18, wherein said contacting is carried out for a time of from about 1 minute to about 5 minutes.

26. The method of claim 18, wherein said contacting is carried out at temperature in a range of from about 20°

C. to about 40°

C.

27. The method of claim 18, wherein the fluoride source comprises a fluoride-containing compound selected from the group consisting of ammonium fluoride, hydrogen fluoride, ammonium bifluoride, tetraalkylammonium difluoride, alkyl phosphonium difluoride, and triethylamine trihydrofluoride.

28. The method of claim 18, wherein the at least one organic amine comprises N-(2-cyanoethyl)ethylenediamine.

29. The method of claim 28, wherein the aqueous-based removal composition further comprises at least one additional organic amine.

30. The method of claim 29, wherein the at least one additional organic amine comprises an amine-containing compound selected from the group consisting of hydroxyethylpiperazine, hydroxypropylpiperazine, aminoethylpiperazine, aminopropylpiperazine, hydroxyethylmorpholine, hydroxypropylmorpholine, aminoethylmorpholine, aminopropylmorpholine, triethanolamine, pentamethyldiethylenetriamine, dimethylaminoethoxyethanol, aminoethoxyethanol, ethylene urea, trimethylaminoethylethanolamine, trimethylaminopropylethanolamine, and N-(2-cyanopropyl) ethylenediamine.

31. The method of claim 18, wherein the at least one organic solvent comprises a compound selected from the group consisting of 1,4-butanediol, 1,3-butanediol, ethylene glycol, propylene glycol, N-methyl-2-pyrrolidone, DMSO, r-butyrolactone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethyleneglycol monobenzylether, ethyl lactate, ammonium lactate, and dimethyl acetamide.

33. The method of claim 18, comprising at least one chelating agent selected from the group consisting of iminodiacetic acid, boric acid, ammonium borate, ammonium tetraborate, gluconic acid, mannitol, and sorbitol.

35. The method of claim 18, comprising at least one surfactant selected from the group consisting of:

(C₁-C₁₅) alkyl glucosides;

(C₁-C₁₅) alkyl ethylene oxide/propylene oxide;

C₁-C₁₀) alkyl phenoxy ethylene oxide/propylene oxide; and

oxirane, methyl-, polymer with oxirane, ether with 2,2′

-(oxidoimino)bis(ethanol) (2;

1) and N(-3-(C(-11-isoalkyloxy)propyl) derivatives.

39. The method of claim 18, selected from the group consisting of Formulations F, wherein all percentages are by weight, based on total weight of the formulation:

Formulation A

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.05% decyl glucoside;

Formulation B

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 25% propylene glycol monomethyl ether; and

about 30% de-ionized water;

Formulation C

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 24% propylene glycol monomethyl ether;

about 30% de-ionized water; and

about 1% ammonium tetraborate;

Formulation D

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% alkyl EOPO amine oxide surfactant;

Formulation E

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% EO octylphenol surfactant; and

Formulation F

about 8% NH₄F/HF;

about 30% hydroxyethylmorpholine;

about 7% N-(2-cyanoethyl) ethylenediamine;

about 15% propylene glycol monomethyl ether;

about 40% de-ionized water; and

about 0.10% EO nonylphenol surfactant;

wherein the total of the weight percentages of such components of the composition does not exceed 100% by weight.

40. The method of claim 18, wherein the composition comprises comprising the following components, based on total weight of the composition:

0.1% wt.-15.0% wt. fluoride source;

20.0% wt.-60.0% wt. total organic amine;

1.0% wt.-60.0% wt. total organic solvent;

20.0% wt.-70.0% wt. water;

0.000% wt.-20.0% wt. chelating agent; and

0.000% wt.-5.0% wt. surfactant,

wherein the total of the weight percentages of such components of the composition does not exceed 100 % by weight.

41. The method of claim 18, wherein the pH of the composition is in a range from about 5 to about 9.

42. The method of claim 18, further comprising contacting the substrate with deionized water following contact with the aqueous-based removal composition.

43. The method of claim 18, further comprising residue material selected from the group consisting of photoresist, BARC materials, gap fill materials, and combinations thereof.

45. The method of claim 18, wherein the at least one additional organic amine comprises an amine-containing compound selected from the group consisting of hydroxyethylpiperazine, hydroxypropylpiperazine, aminoethylpiperazine, aminopropylpiperazine, hydroxyethylmorpholine, hydroxypropylmorpholine, aminoethylmorpholine, aminopropylmorpholine, triethanolamine, pentamethyldiethylenetriamine, dimethylaminoethoxyethanol, aminoethoxyethanol, ethylene urea, trimethylaminoethylethanolamine, trimethylaminopropylethanolamine, N-(2-cyanoethyl)ethylenediamine, and N-(2-cyanopropyl)_ethylenediamine.

19. (canceled)

21-24. -24. (canceled)

32. (canceled)

34. (canceled)

36-38. -38. (canceled)