Devices and methods for using electrofluid and colloidal technology

• US 20080006604A1
• Filed: 11/02/2005
• Published: 01/10/2008
• Est. Priority Date: 04/07/2005
• Status: Abandoned Application

• Current Assignee: John Keady
• Original Assignee: John Keady
• Inventors: Keady, John
• Application Number:
  US11/265,041
• Publication Number:
  US 20080006604A1
• Time in Patent Office: Days
• US Class Current: 216/083
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

At least one exemplary embodiment is directed to a device that uses a charged photoresist which is subsequently patterned by electric and/or magnetic fields and subsequently exposed and developed to provide an etchable pattern in a semiconductor substrate.

Claims

1. A method of structure formation comprising:

depositing a first medium on a second medium, wherein the first medium is charged;

shaping the first medium into a pattern, wherein the pattern is formed by the first medium'"'"'s reaction to the application by at least one of electric and magnetic fields; and

curing the shaped first medium, wherein the cured shaped medium substantially retains it'"'"'s shape upon removal of the fields.

2. The method of claim 1, further comprising:

etching the shaped first medium forming a similar structure in the second medium.

8. The method according to claim 2, wherein the second medium is one of a semiconductor, a metal, a glass, a plastic, and a polymer.

9. The method according to claim 2, further comprising:

electrically neutralizing the developed first medium.

3. A structure comprising:

a first element, wherein the first element is formed by curing a first medium, where the first medium has been shaped by at least one of electric and magnetic fields while the first medium had a net charge.

4. The structure according to claim 3, wherein the first medium was charged by using a medium charger, wherein the medium charger comprises:

a medium holder, wherein the medium holder is configured to hold a first medium; and

an electrode, wherein there is a voltage difference between the hoop electrode and the medium holder, where the first medium is forced out of the medium holder and becomes charged due to the voltage difference, and where the electrode is operatively connected to the medium holder.

5. The structure according to claim 4, where the first medium breaks into droplets after passing through the electrode, where the droplets have a net charge, and where the droplets coalesce into a net charged first medium.

6. The structure according to claim 3, wherein the first medium is one of a photoresist material and an optical material that can be cured by light.

7. The structure according to claim 3, wherein the first medium is heat curable.

10. The structure according to claim 3, wherein the first medium is one of a semiconductor, a metal, a glass, a plastic, and a polymer.

11. A method of aphron production comprising:

flowing a core medium through an inner channel;

flowing at least one sheath medium through at least one outer channel, wherein the at least one outer channel surrounds a portion of the inner channel;

shaking the inner and outer channels at a design frequency f, wherein the core medium and at least one sheath medium flows into a third exterior medium, wherein upon flowing into the exterior medium aphrons are formed, wherein the aphrons have a core which includes the core medium and at least one sheath composed of the at least one sheath medium, and wherein the number of aphrons per second is about the same number as the design frequency f multiplied by one second.

12. The method of aphron production according to claim 11, wherein a first voltage difference is placed across one of the at least one outer channel, so that the sheath medium corresponding to the one of the at least one outer channels is charged.

13. The method of aphron production according to claim 12, wherein a second voltage difference is placed across inner channel, so that the core medium is charged.

14. The method of aphron production according to claim 11, further comprising:

accumulating the aphrons; and

curing the aphrons, so that at least a portion of the aphrons become a solid or gell.

15. The method of aphron production according to claim 12, further comprising:

accumulating the aphrons; and

curing the aphrons, so that at least a portion of the aphrons become a solid or gell, and wherein a portion of the cured aphrons retain a portion of their electrical charge.

16. The method of aphron production according to claim 15, further comprising:

varying the first and second voltage difference in time, wherein the varying produces aphrons of varying electrical net charges;

applying an electrical field to accumulated aphrons, wherein the applied electric field moves aphrons having more charge in first direction; and

curing the aphrons, so that at least a portion of the aphrons become a solid or gell, and wherein a portion of the cured aphrons retain a portion of their electrical charge.