Top-emitting N-based light emitting device and method of manufacturing the same

• US 20080006842A1
• Filed: 06/18/2007
• Published: 01/10/2008
• Est. Priority Date: 06/22/2006
• Status: Active Grant

• Current Assignee: Korea University Industrial & Academic Collaboration Foundation, Samsung Electronics Co. Ltd.
• Original Assignee: Korea University Industrial & Academic Collaboration Foundation, Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Tak-hee, Seong, Tae-yeon, Leem, Dong-seok
• Granted Patent: US 8,227,283 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.

Claims

1. A method of manufacturing an N-based light emitting device, the method comprising:

forming a transparent conductive thin film on a p-type clad layer of a light emitting structure in which an n-type clad layer, an active layer, and the p-type clad layer are sequentially stacked on a substrate;

wet-etching the transparent conductive thin film; and

annealing the wet-etched transparent conductive thin film.

2. The method of claim 1, further comprising:

forming a metal thin film having a thickness within the range of about 0.1 to 50 nm on the p-type clad layer prior to forming the transparent conductive thin film.

3. The method of claim 1, wherein the transparent conductive thin film is formed of a transparent conductive oxide which is a combination of O and at least one selected from the group consisting of In, Sn, Zn, Ga, Ce, Cd, Mg, Be, Ag, Mo, V, Cu, Ir, Rh, Ru, W, Co, Ni, Mn, Al, and La.

4. The method of claim 1, wherein the transparent conductive thin film is formed to a thickness within the range of about 10 to 700 nm.

5. The method of claim 1, wherein the wet-etching of the transparent conductive thin film is performed using an undiluted solution selected from the group consisting of buffered oxide etch (BOE), hydrofluoric acid (HF), hydrochloric acid (HCl), nitric acid (HNO₃), phosphoric acid (H₃PO₄), sulfuric acid (H₂SO₄), potassium hydroxide (KOH), oxalic acid, tartaric acid, formic acid, acetic acid, and glycolic acid, a mixture of the undiluted solutions, a diluted solution of the undiluted solution, or a mixture of the undiluted solutions diluted in deionized water.

6. The method of claim 1, wherein the transparent conductive thin film is wet-etched at a temperature within the range of about room temperature to 300°

C. for approximately 0.1 seconds to 1 hour.

7. The method of claim 1, wherein the wet-etched transparent conductive thin film is annealed at a temperature within the range of about room temperature to 900°

C. for approximately 10 seconds to 3 hours.

8. The method of claim 7, wherein the annealing of the wet-etched transparent conductive thin film is performed in a vacuum or a gas ambient containing at least one of nitrogen (N₂), argon (Ar), helium (He), oxygen (O₂), hydrogen (H₂), and air.

9. The method of claim 2, wherein the metal thin film is formed of one selected from the group consisting of Ni, Co, Cu, Pd, Pt, Ru, Ir, Au, Ag, Cr, Rh, In, Sn, Mg, Zn, Be, Sr, and Ba, or an alloy, or a solid solution comprising two or more of the metals.