Method of Forming a Solution Processed Device
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Abstract
Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.
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Citations
62 Claims
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1-29. -29. (canceled)
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30. An apparatus, comprising:
a multilayer device comprising at least one layer having one or more dielectric properties, wherein said layer having one or more dielectric properties is comprised of at least one inorganic dielectric material and at least one organic dielectric material, wherein at least a portion of said inorganic dielectric material and at least a portion of said organic dielectric material are deposited by use of one or more solution processes. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. An apparatus, comprising:
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means for depositing a first material over at least a portion of a substrate by use of one or more solution processes to form a first material layer, at least a portion of said first material layer comprising inorganic dielectric material;
means for depositing a second material over and/or in contact with at least a portion of said first material layer to form a second material layer by use of one or more solution processes, at least a portion of said second material layer comprising organic dielectric material, to form at least a portion of a dielectric device layer of a thin film transistor. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. A thin film transistor (TFT), formed substantially by a process comprising:
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depositing a first material over at least a portion of a substrate by use of one or more solution processes to form a first material layer, at least a portion of said first material layer comprising inorganic dielectric material;
depositing a second material over and/or in contact with at least a portion of said first material layer by use of one or more solution processes to form a second material layer, at least a portion of said second material layer comprising organic dielectric material, to form at least a portion of a dielectric device layer. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62)
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Specification